IPB45N06S409ATMA2

The IPB45N06S409ATMA2 is a single-channel, high-side, N-channel, power MOSFET manufactured by Infineon Technologies. It is used in many applications such as dc--dc converters, motor control, battery chargers, power distribution systems, etc. This MOSFET is rated at 45V and can carry up to 10A of continuous current. Here, we will look into the features, application field and working principle of the IPB45N06S409ATMA2.

Features

• AEC-Q101 qualified
• Very low RDS(on)
• Low gate charge
• Fast switching
• High avalanche energy
• Extended SOA capabilities
• Lead-free/Halogen-free/Antimony-Free.

Application Field

The IPB45N06S409ATMA2 is ideally suited for a variety of applications such as motor control, dc--dc converters, lighting applications, battery chargers, power distribution systems, consumer appliances etc. In motor control, it can be used for high-current switching, e.g. in brushless motors, and for protection circuits.

Working Principle

The IPB45N06S409ATMA2 is a N-channel power MOSFET that operates in the depletion mode. This means that the body and source terminals of the FET are connected together by a thin layer of P-type Silicon material. The MOSFET is enabled by the application of a positive voltage between the gate and source terminals, which attracts electrons to the transistor’s gate (opposite of a P-Channel FET). The electrostatic attraction of the channel electrons by the gate creates a conductive channel between the drain and source.

At lower voltages, the current allowed through the channel is determined by the gate-source voltage, while at higher voltages the current is limited by the resistance of the channel itself. As the drain-source voltage is increased, so is the resistance of the channel. This is known as the “voltage-dependent” resistance of the MOSFET, which limits the maximum current allowed through the MOSFET.

Using the body and source terminals as a single source, the gate voltage must be low enough for the channel to become conductive and the current to commence. When the voltage is removed from the gate, the MOSFET turns off and current flow stops.

Conclusion

The IPB45N06S409ATMA2 is a single-channel, high-side, N-channel, power MOSFET manufactured by Infineon Technologies. It is used in many applications such as dc--dc converters, motor control, battery chargers, power distribution systems, etc. The features and the operation of the FET make it suitable for applications which need fast and efficient switching of current. It is a reliable and cost-effective solution for any kind of application.