IPB90N06S404ATMA2

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The IPB90N06S404ATMA2 transistor is a depletion-mode FET designed for a wide range of applications, such as motor control, voltage regulation, power management, and switch mode power conversion. It is a single, N-channel MOSFET with a drain-source breakdownd voltage of 120V and a continuous drain current at 25°C of 20A. The device also features a low gate-source threshold voltage, very low RDS(ON), and a maximum operating frequency of 700kHz.

The working principle of the device is based on the MOSFET technology. The basic principle behind the operation of a MOSFET is the variation of charge and current flow through the device as a function of gate-source voltage. The amount of flow is determined by the voltage drop across the gate-source junction which is proportional to the magnitude of the voltage applied (gate voltage). When a negative voltage is applied to the gate, the flow of charge is blocked, due to the depletion of the channel created by the voltage drop across the junction. Conversely, when a positive gate voltage is applied, the interface between the source and drain is turned on and current can flow through the device.

When it comes to its application field, the IPB90N06S404ATMA2 is ideal for high-efficiency and current-driven applications such as power switching, Voltage regulator/controller, power management and motor control as well as any other applications that require low on-resistance, minimum harmonic distortion and low switching losses. The device is also suitable for use in many switched-mode power conversion circuits and can be used to drive high-current loads up to 20A.

The device is also suitable for use in PWM or other current-regulated circuits, including applications such as motor control, DC-DC converters, and power controllers that require tight control of current. Additionally, the IPB90N06S404ATMA2 can be used in circuits requiring high switching speeds, such as those found in power management circuits, which require a fast rise time and low transient response. Additionally, it also has built-in temperature protection and overcurrent protection, making it suitable for use in high-power applications.

In summary, the IPB90N06S404ATMA2 is a single, N-channel MOSFET with a drain-source breakdown voltage of 120V. It has a low gate-source threshold voltage and a very low RDS(ON). This makes it suitable for a wide range of applications, including motor control, voltage regulation, power management and switch mode power conversion. Additionally, its built-in temperature and overcurrent protection functions make it suitable for use in high-power applications. This is why the IPB90N06S404ATMA2 is an increasingly popular choice for use in many power control circuits.

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