Allicdata Part #: | IPC045N10L3X1SA1-ND |
Manufacturer Part#: |
IPC045N10L3X1SA1 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1A SAWN ON FOIL |
More Detail: | N-Channel 100V 1A (Tj) Surface Mount Sawn on foil |
DataSheet: | IPC045N10L3X1SA1 Datasheet/PDF |
Quantity: | 1000 |
31190 +: | $ 0.25254 |
Series: | OptiMOS™ |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 2.1V @ 33µA |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | Sawn on foil |
Package / Case: | Die |
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Transistors are basic electronic components used to control currents and voltages. They are used in a wide range of applications, from consumer electronics to industrial electronic systems. Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are the most commonly used transistors in the world. IPC045N10L3X1SA1 is a single FET and MOSFET device.
IPC045N10L3X1SA1 is an enhancement-mode (normally OFF) vertical DMOSFET. It has a drain to source voltage rating of 45V and a drain current rating of 10A (continuous). It has a maximum power dissipation rating of 90W. It is a low gate charge device, with a Ron of 13.5mΩ. It is ideal for applications such as motor control, current control in DC-DC converters, AC switchmode power supplies, drivers in automotive automotive sensors, and drivers for relays and solenoids.
The working principle of the IPC045N10L3X1SA1 is based on the ability of a voltage applied to the gate to control the current flow between the drain and source. When a voltage is applied to the gate, it creates an electric field between the gate and the drain. This electric field creates a channel between the drain and source which allows the current to flow. The more the voltage applied to the gate, the larger the electric field and the greater the current that can flow through the channel. When the voltage is removed, the electric field is reduced and the channel closes, stopping the current flow.
The IPC045N10L3X1SA1 is specifically designed for low voltage and high current applications. Its low drain to source VDSS rating and its high drain current ID rating make it ideal for applications that require the switching of high currents with low voltages. Its low gate charge and low Ron rating also make it an ideal choice for applications requiring low losses.
In conclusion, the IPC045N10L3X1SA1 is a single FET and MOSFET device with 45V drain to source voltage rating, 10A drain current rating, and a 90W maximum power dissipation rating. It is used in applications such as motor control, current control in DC-DC converters, AC switchmode power supplies, automotive automotive sensors, and drivers for relays and solenoids. Its working principle is based on the ability of the gate voltage to control the current flow between the drain and source.
The specific data is subject to PDF, and the above content is for reference
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