IPC50N04S5L5R5ATMA1 Allicdata Electronics

IPC50N04S5L5R5ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPC50N04S5L5R5ATMA1TR-ND

Manufacturer Part#:

IPC50N04S5L5R5ATMA1

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: N-CHANNEL_30/40V
More Detail: N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-T...
DataSheet: IPC50N04S5L5R5ATMA1 datasheetIPC50N04S5L5R5ATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.20743
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2V @ 13µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1209pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPC50N04S5L5R5ATMA1 is a power MOSFET that has become a common component in distributed power applications. This component is a single, low-on-resistance MOSFET (metal-oxide semiconductor field-effect transistor) with a typically low Zsc (voltage from source to the body) that is used for its reliable high current, low on-resistance, and exceptional voltage characteristics. It is ideal for use in distributed power applications, such as power-over-Ethernet (PoE), automotive power systems, and renewable energy applications.

The IPC50N04S5L5R5ATMA1 is designed to be used as a switch in distributed power systems, which means that it can open or close an electrical current in a circuit to control the amount of power that flows through it. The MOSFET is usually used in an integrated circuit (IC) to provide the opening and closing of the circuit. It is most commonly used when either an analog or digital signal needs to be switched on or off. The MOSFET is extremely reliable and is highly immune to electrical noise, making it suitable for use in a variety of environments.

The basic principle of operation of the IPC50N04S5L5R5ATMA1 is based on the theory of MOSFETs. The MOSFET works by forming an inversion layer of electrons at the surface of the semiconductor material that creates either a hole-type or an electron-type layer. Depending on the type of MOSFET and the application, the inversion layer can be either a positive or a negative voltage source, which allows the MOSFET to open or close a circuit to control the amount of current that flows through it. The MOSFET also has a dielectric charge that is controlled by the gate current, which is used to control the amount of current that can flow through the circuit.

The IPC50N04S5L5R5ATMA1 is designed to be used in a variety of applications, including distributed power applications, automotive power systems, and renewable energy applications. It is also suitable for use in industrial applications, such as motion control and machine tool applications. It can be used as a switch in both analog and digital applications, and is highly immune to electrical noise. It has an exceptionally low Zsc that makes it well-suited for use in distributed power applications.

The IPC50N04S5L5R5ATMA1 is a popular power MOSFET because of its reliability, low on-resistance, and excellent voltage characteristics. Its suitability for use in distributed power applications and its immunity to electrical noise make it a common choice for a variety of applications. Its exceptionally low Zsc ensures that it can handle high current loads with ease, making it ideal for use in distributed power systems.

The specific data is subject to PDF, and the above content is for reference

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