Allicdata Part #: | IPC70N04S54R6ATMA1TR-ND |
Manufacturer Part#: |
IPC70N04S54R6ATMA1 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 70A 8TDSON-34 |
More Detail: | N-Channel 40V 70A (Tc) 50W (Tc) Surface Mount PG-T... |
DataSheet: | IPC70N04S54R6ATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.21518 |
Vgs(th) (Max) @ Id: | 3.4V @ 17µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8-34 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24.2nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPC70N04S54R6ATMA1 is a Surface Mount Single N-Channel logic level enhancement mode Field Effect Transistor (FET). It is a power efficient device, which is optimised entirely for low-voltage applications and high-current applications. The device is capable of providing up to 60 A peak current, with a drain-source voltage of up to 40 V and a gate-source voltage of up to 5 V.
This particular device has an application field in many aspects of modern technology as it has become a popular choice for high-current, low-voltage designs both for its power efficiency and small size. It is commonly used in high-frequency switching power supplies, low-side switching applications, hard-drive motor circuits, load switches, high-current level shifting and many other applications.
The principle of single N-Channel logic level enhancement mode Field Effect Transistor (FET) devices is based upon the ability of the device to conduct current in one direction when a certain gate voltage is applied. This is known as its “enhancement mode” of operation. When a positive gate voltage is applied, it creates a channel between the source and drain that allows current to flow.
Additionally, the IPC70N04S54R6ATMA1 is configured differently than other similar devices. It has a self-aligned structure, meaning that its gate oxide layer is grown over the source and drain rather than a gate electrode as with other FETs. This reduces the space required on the board and, importantly, also provides better performance and reliability.
The IPC70N04S54R6ATMA1 also has a very low on-resistance, meaning that it can switch faster and without generating as much heat. This low on-resistance also reduces power dissipation, which is especially useful when using multiple FETs in a circuit.
The IPC70N04S54R6ATMA1 is a robust, reliable and cost-effective power switch device and its popularity is due in no small part to these features. It is a device that is capable of handling very high currents and is designed to do so without compromising safety, reliability or performance. This combined with its small package and low price point makes it the ideal choice for many high-current, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPC70N04S54R6ATMA1 | Infineon Tec... | 0.23 $ | 1000 | MOSFET N-CH 40V 70A 8TDSO... |
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