| Allicdata Part #: | IPD49CN10NG-ND |
| Manufacturer Part#: |
IPD49CN10N G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 20A TO252-3 |
| More Detail: | N-Channel 100V 20A (Tc) 44W (Tc) Surface Mount PG-... |
| DataSheet: |  IPD49CN10N G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 20µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 44W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IPD49CN10N G is an N-channel enhancement-mode power field-effect transistor (FET) that belongs to a class of components known as insulated-gate field-effect transistors (IGFETs). This type of FET is commonly used in various types of electronic applications where efficient, fast switching is required. The IPD49CN10N G is a high-performance, low-cost FET that offers excellent characteristics in terms of speed, power dissipation, and efficiency.
The IPD49CN10N G is a single FET-channel device that is designed to accept both AC and DC signals. This device is composed of an insulated-gate region sandwiched between two highly conductive N-type material layers. When a gate voltage is applied, this device allows current to flow in the N-type material channels. The voltage at the gate determines the amount of current that is allowed to flow. When gate voltage is low, current is blocked. Conversely, when gate voltage is increased, current is allowed to flow.
One of the main advantages of the IPD49CN10N G is that it offers fast switching times. This is due to the low capacitance between gate and source. In addition, the on-resistance of this FET is very low, resulting in excellent efficiency. As such, it is highly suitable for high-frequency circuits.
The IPD49CN10N G is also well-suited for use as a switch in electronic applications. It is commonly used for power supply control, power conversion, and motor and lighting control. The low gate-to-source capacitance and low on-resistance make this device ideal for applications such as power factor correction and DC-DC converters. In addition, it is also used in automotive applications such as accelerator pedal control and fuel injection systems.
The IPD49CN10N G is an ideal device for applications that require low power dissipation and high switching speeds. This FET offers excellent performance in terms of efficiency, power, and frequency response. Its low gate-to-source capacitance, low on-resistance, and low leakage current make it an ideal choice for a wide range of applications. It is also relatively affordable and can be used in a variety of devices and applications.
The specific data is subject to PDF, and the above content is for reference
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