| Allicdata Part #: | IPF04N03LA-ND |
| Manufacturer Part#: |
IPF04N03LA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 50A DPAK |
| More Detail: | N-Channel 25V 50A (Tc) 115W (Tc) Surface Mount P-T... |
| DataSheet: |  IPF04N03LA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | OptiMOS™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5199pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 115W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | P-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPF04N03LA is a high performance single N-channel enhancement type MOSFET manufactured with silicon stripe and DMOS technology. In order to ensure low on-voltage drive and low turn-off loss, the device features an integral fast recovery diode, which makes it an ideal choice for many different applications. This article will discuss the application field and working principle of this device.
Application Field
The IPF04N03LA has a wide range of applications, from DC/DC switching and power supplies, to motor control. It can also be used in audio amplifiers, transducers, and robotics, as well as automotive, communication and industrial applications. In addition, the device can be used in high frequency switching applications, where low on/off delays are required.
Working Principle
The IPF04N03LA is a type of transistor, or field-effect transistor (FET). It is a three-terminal device consisting of a source, a gate, and a drain. The FET works by controlling the current flowing through the device in response to the voltage applied to the gate. A small amount of voltage applied to the gate turns on the device, allowing current to flow through the source-drain channel. As more voltage is applied to the gate, the current increases, allowing for current to be regulated and controlled.
At turn-off, the device responds very quickly due to the fast recovery diode, allowing for a low turn-off delay. This helps to minimize power dissipation, as well as reduce electromagnetic interference. In addition, the device has a low on-voltage drive, allowing it to be used in low voltage applications as well.
The IPF04N03LA is also very versatile, capable of being used in both analog and digital applications. Thanks to its integrated fast recovery diode, it is an efficient piece of technology, and its versatility makes it an ideal choice for a wide range of applications.
In summary, the IPF04N03LA is a high performance single N-channel enhancement type MOSFET. It has a wide range of applications in both analog and digital systems, and its on/off times are very low. Thanks to its integral fast recovery diode, it also has high efficiency, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPF04N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A DPAKN... |
| IPF04N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A DPAKN... |
| IPF06N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A DPAKN... |
| IPF09N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A DPAKN... |
| IPF09N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A DPAKN... |
| IPF05N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A DPAKN... |
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