Allicdata Part #: | IPF13N03LAGINTR-ND |
Manufacturer Part#: |
IPF13N03LA G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 30A DPAK |
More Detail: | N-Channel 25V 30A (Tc) 46W (Tc) Surface Mount P-TO... |
DataSheet: | IPF13N03LA G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | P-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1043pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPF13N03LA G is a type of field-effect power transistor (FET) commonly used in electronic and electrical applications. It is a N-channel insulated gate FET that is capable of providing power amplification and insulation from other circuits when operated correctly. This device has a wide variety of uses and can be found in numerous commercial and military electronics.
The basic construction of the IFP13N03LA G consists of three layers of N-type and P-type silicon, forming the source, gate, and drain. This configuration is a single channel MOSFET which is widely used in switching and amplification. The construction of the gate allows devices to be operated by applying a voltage between the gate and the source.
The N–channel IFP13N03LA G is designed to be used where fast switching and tight control of current is required. Common applications include power management and motor control, as well as operational amplifiers and logic gate construction. The IFP13N03LA G is also commonly used for LED lighting and high-frequency radio applications.
The main advantage of using the IFP13N03LA G is its low on resistance. By utilizing low on resistance, it can be used to reduce power dissipation and increase switching efficiency. The IFP13N03LA G also has a high switching speed which is beneficial in many applications, as it can respond quickly without large delays. Additionally, the gate of the IFP13N03LA G can be biased to achieve further control of the current.
In addition to the benefits mentioned above, the IFP13N03LA G has a variety of other performance characteristics. It can run with low gate leakage current and can withstand large breakdown and temperature variations. The device also has a wide temperature range, enabling it to be used in high and low temperature environments. Its low gate-to-drain capacitance also allows for high-speed switching, making it suitable for applications such as radio frequency amplifiers.
In summary, the IFP13N03LA G is a reliable, high-performance N-channel MOSFET. It is suitable for a wide range of applications and has a variety of advantages including low on resistance and high switching speeds. The IFP13N03LA G is available in a variety of package sizes, allowing it to be used in a multitude of applications. There is also a range of temperature ratings, allowing the device to be used in both high and low temperatures.
The specific data is subject to PDF, and the above content is for reference
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