IPFH6N03LA G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPFH6N03LA G is a depletion type enhancement mode N-channel MOSFET with a small 8-pin DIP (Dual In-line Package) for cost-sensitive applications. It is an excellent choice for power and load switch applications where losses are a consideration. The N-channel MOSFET can be used as a three-terminal or four-terminal device and is particularly suited for low-side switching applications.

The IPFH6N03LA G is an ideal choice for medium frequency, high power applications. Its power dissipation ranges from 0.35 to 1.7 W, gate capacitance from 0.4 to 1.4 nF and on-resistance of 0.7 to 1.2 ohms. The device operates at frequencies up to 4 GHz with a very low on-resistance, high efficiency, and excellent noise immunity. It is also able to handle the harsh environments required for automotive applications. The device has a wide range of drain-source blocking Voltage, from 30 to 60 V, which makes it suitable for many load switch applications.

The IPFH6N03LA G uses MOSFET’s (Metal Oxide Semiconductor Field Effect Transistors) as its active element. MOSFETs are typically three-terminal, voltage-controlled semiconductor devices that can be used as switches in circuits. These devices consist of a channel between two source/drain regions, where current flow is generated by the application of a voltage to the gate. When the gate voltage (VGS) is less than some threshold voltage (Vth), the device is off and no current can flow through it. This is the depletion mode. When VGS exceeds the threshold voltage, the device turns on, allowing current flow.

The IPFH6N03LA G is designed with a high-voltage, high-power, and low-on-resistance surface-mounted device (SMD) for cost-effectiveness. It can operate at temperatures up to 125C and is also capable of handling reverse blocking voltage up to 30 V. This makes it very suitable for automotive applications and other situations where high voltage is required. Additionally, the device has excellent ESD (electrostatic discharge) protection, making it highly reliable and robust even in the harshest environmental conditions.

The IPFH6N03LA G is used in a wide range of applications from power supplies, load switches, and power balancers to battery charger and UPS systems. It is also widely used in various applications such as motor control, noise reduction, and dimmer control. For example, it can be used in motor controllers to regulate the current and voltage received by the motor when it is switched on, thereby reducing noise and providing a more efficient operation. In addition, it can be used to regulate the intensity of LED bulbs or lights by adjusting the voltage. The IPFH6N03LA G is also used in automotive power supply systems to regulate the voltage levels and is popular in UPS systems because of its high efficiency, low on-resistance, and excellent noise immunity.

The IPFH6N03LA G is a versatile and powerful solution for low-side switching and power regulation applications. It has good thermal dissipation characteristics, wide operating temperature range, a wide range of drain bias voltage, and excellent ESD protection. Its low on-resistance and high efficiency make it an ideal choice for low-side switching applications where cost, size, and losses are considerations. In addition, its wide ranging gate capacitance and high frequency operation make it suitable for many medium- to high-power applications.

The specific data is subject to PDF, and the above content is for reference