
Allicdata Part #: | IPI45N06S4L08AKSA1-ND |
Manufacturer Part#: |
IPI45N06S4L08AKSA1 |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 45A TO262-3 |
More Detail: | N-Channel 60V 45A (Tc) 71W (Tc) Through Hole PG-TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 0.42136 |
Vgs(th) (Max) @ Id: | 2.2V @ 35µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4780pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IPI45N06S4L08AKSA1 is a single-gate field effect transistor (FET) that is used in various electrical and electronic components and applications. This FET is commonly found in mobile phone circuitry, remote-controlled cars and aircraft, micro-controllers, and medical implants. It has the capacity to control power and act as an amplifier.
A FET is a type of transistor that utilizes a physically small electrical signal and increases its power with the help of an internal electric field. It operates with a single active gate, which allows the transistor to switch on and off with minimal power. The FET has been in use for many decades, and is the basis for the vast majority of modern semiconductors.
The IPI45N06S4L08AKSA1 FET is a single-gate field effect transistor, or FET for short. This type of transistor operates with a single gate and has a higher input impedance than its counterparts. This allows for a more efficient power implementation and greater control over the circuit. The FET is especially well suited for use in low-power radio-frequency devices, such as mobile phones, satellite transmitters, and other applications that require a flexible power source.
The working principle of the IPI45N06S4L08AKSA1 FET is based on the gate-source voltage, which is applied to the FET gate to control the flow of current. When the gate is sufficiently negative with respect to the source, the FET is in the OFF state and no current flows. Conversely, when the gate voltage is positive with respect to the source, the FET is in the ON state, allowing current to flow. This process can be seen in the following illustration:

In addition, the IPI45N06S4L08AKSA1 has two other functions. The depletion mode and the enhancement mode. In depletion mode, the FET is naturally off, while in enhancement mode the FET is naturally on. The application of the FET depends on the mode selected. When using the FET in a radio-frequency device, the depletion mode is typically selected, as it provides better control of the device and minimizes power consumption.
The IPI45N06S4L08AKSA1 is a widely used single-gate FET, as it offers high performance and unparalleled flexibility. It can be used in a variety of applications, from radio-frequency systems to medical implants. This makes it an ideal component for the ever-evolving demands of the electronics industry.
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