IPI70N12S3L12AKSA1

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IPI70N12S3L12AKSA1 Application Field and Working Principle

IPI70N12S3L12AKSA1 is an high-performance Insulated Gate Bipolar Transistor (IGBT) module. It is designed for power inverters and converters in automotive, industrial and renewable energy applications. The module consists of two IGBTs in a single package with a built-in FWD (diode) and a high-speed anti-parallel diode.

Application Field

IPI70N12S3L12AKSA1 IGBT modules are designed for use in high-power conversion applications including power factor correction, DC-DC converters, regenerative converters, AC/DC inverters, motor drives, uninterruptible power supplies, renewable energy systems and PWM converters.

The module is optimized for automotive applications where it provides excellent power density, current handling, fast switching and low conduction losses. It is a suitable choice for applications including motor drives, braking systems, HVAC controls, lighting systems or other automotive applications.

Working Principle

IPI70N12S3L12AKSA1 is a single IGBT module with integrated anti-parallel diodes. IGBTs are semiconductor devices that combine the properties of Field Effect Transistors (FETs) and BJTs (Bipolar junction transistors). With the addition of an anti-parallel diode, this configuration can be used in either a single-ended or push-pull topology for different applications.

The IGBT is driven by applying a control voltage to the gate of the IGBT. The PN junctions between the N-type and P-type silicon act similarly to a resistive switch, by controlling the voltage and current across the junctions. As the current is switched on and off, a high-frequency PWM signal is generated, producing an alternating current.

The anti-parallel diode is a special kind of diode connected in parallel with the IGBT and its polarity is reversed. When the IGBT is in its off-state, the diode conducts most of the current, providing faster switching times and protecting the IGBT from voltage spikes or inductive loads. It also removes the generated heat from the module.

IPI70N12S3L12AKSA1 IGBT modules offer reliable and efficient operation even at high temperatures, enabling fast switching speeds and improved power conversion efficiency. This module is well-suited for systems requiring high-performance, high-reliability and low conduction losses.

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