IPN80R2K0P7ATMA1 Allicdata Electronics
Allicdata Part #:

IPN80R2K0P7ATMA1TR-ND

Manufacturer Part#:

IPN80R2K0P7ATMA1

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CHANNEL 800V 3A SOT223
More Detail: N-Channel 800V 3A (Tc) 6W (Tc) Surface Mount PG-SO...
DataSheet: IPN80R2K0P7ATMA1 datasheetIPN80R2K0P7ATMA1 Datasheet/PDF
Quantity: 6000
1 +: $ 0.17600
10 +: $ 0.17072
100 +: $ 0.16720
1000 +: $ 0.16368
10000 +: $ 0.15840
Stock 6000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Package / Case: SOT-223-3
Supplier Device Package: PG-SOT223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: CoolMOS™ P7
Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPN80R2K0P7ATMA1 is a single transistor of high power, and it is manufactured by a company called Infineon Technologies, who is known for its innovative products. The transistor is a part of the family of FETs, or field effect transistors, which are designed to amplify signals. The IPN80R2K0P7ATMA1 is one of the most powerful and efficient transistors on the market, and can be used in a variety of applications.

The IPN80R2K0P7ATMA1 is particularly suited for use in applications that require high power and low distortion, such as audio amplifiers and motor control circuits. It is also ideal for power supplies, where it can control large amounts of current. As a result, the transistor is extremely versatile and can be used in a wide range of applications.

The most important aspect of the IPN80R2K0P7ATMA1 is its working principle. At its core, the transistor is a field effect device, which uses an electric field to control the flow of current through the device. This is why it is sometimes referred to as a Field Effect Transistor (FET).

When the device is used in an amplifier, the electric field controls the current flow, allowing the amplifier to amplify a signal. The amplifier has two primary inputs: the gate and the source. The gate is the control terminal, while the source is the input voltage to the transistor. The gate voltage controls the amount of current flowing through the device, and thus the amount of amplification.

In motor control circuits, the gate controls the speed of the motor. By increasing the voltage at the gate, the current is increased, and thus the speed. By decreasing the voltage, the current is decreased and the speed is reduced. This allows the user to control the speed of the motor with great accuracy.

In power supplies, the IPN80R2K0P7ATMA1 can be used to regulate the amount of current flowing through the circuit. The transistor is able to control the current flow in both directions: when the voltage at the gate is increased, the current is increased, and when the voltage is decreased, the current is decreased. This allows the user to control the amount of current flowing through the circuit with great accuracy.

The IPN80R2K0P7ATMA1 is one of the most reliable and powerful transistors available, and is an ideal option for many applications. The device is able to control both high and low current levels, making it suitable for a wide range of applications. Additionally, the device is very efficient, meaning that it consumes less power than other transistors and is therefore cost-effective.

In conclusion, the IPN80R2K0P7ATMA1 is a powerful and efficient transistor that is suitable for a wide range of applications. The device is able to handle both high and low currents, making it suitable for audio amplifiers, motor control circuits, and power supplies. The device\'s efficient operating principle allows it to consume less power and be more cost-effective in comparison to other transistors, making it an ideal option for many applications.

The specific data is subject to PDF, and the above content is for reference

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