IPS80R2K4P7AKMA1

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The IPS80R2K4P7AKMA1 is a single n-channel power MOSFET developed by STMicroelectronics. It is part of the ST SuperMESH family, a series of MOSFET products designed with an advanced, self-aligned silicon-gate technology to optimize power switching performance and ease of implementation. The IPS80R2K4P7AKMA1 is a high-performance monolithic device and is suitable for a wide range of applications, including consumer and industrial power control, automotive powertrain, and battery management.

The MOSFET works by controlling the electric field between its two gates, through a process that is called surface channel modulation. It is essentially a two-terminal device with a built-in gate electrode, which is capable of modulating the drain-source voltage by changing the bias voltage of the gate. As the gate bias voltage is increased, the surface channel forms and the device conducts current. The MOSFET can be used both as an amplifier and as a switch. When properly biased, it can produce an output current, which is proportional to the input voltage.

Specifically, the IPS80R2K4P7AKMA1 has an RDSon value of 2.4kΩ and can handle a maximum drain-source voltage of 80V and maximum drain current of 7A. It is optimized for low gate charge and fast switching time. It is also designed to use with low gate drive currents, which reduce the need for additional gate driving components.

Integrated MOSFETs are widely used in the fields of power management, power conversion, and power switching. In the automotive industry, they are commonly used as switches in powertrain control systems and in DC-DC converters. In consumer electronics, they are used to control power supplies and in voltage regulation. Furthermore, they are used in DC-DC converter circuits, providing efficient switching power control.

In terms of working principle, the IPS80R2K4P7AKMA1 MOSFET is used as a voltage-controlled switch. The gate electrode is biased to a set voltage, usually ground level or a regulated voltage, depending on the application. The voltage between the drain and the source is then controlled by the gate voltage. When the gate voltage is increased, the drain-source voltage increases and the MOSFET is “ON”. Similarly, when the gate voltage decreases, the drain-source voltage decreases and the MOSFET is “OFF”.

To ensure optimal performance, the IPS80R2K4P7AKMA1 MOSFET should be used with a designated driver. The driver should be programmed to provide appropriate gate to source voltage, gate to drain voltage, and gate current limits. The gate driver should also provide temperature protection for the MOSFET. Finally, the driver should be designed to maintain correct gate biases under all operating conditions.

To conclude, the IPS80R2K4P7AKMA1 is a single n-channel power MOSFET manufactured by STMicroelectronics. It is suitable for a wide range of applications and is capable of providing high performance and reliability. The MOSFET is optimized for low gate charge and fast switching time, and is designed to use with low gate drive currents. It is used as a voltage-controlled switch, with the drain-source voltage controlled by the gate voltage. The device should be used with a designated driver to ensure optimal performance.

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