IPT60R102G7XTMA1

Vgs(th) (Max) @ Id:	4V @ 390µA
Package / Case:	8-PowerSFN
Supplier Device Package:	PG-HSOF-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	141W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1320pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	CoolMOS™ G7
Rds On (Max) @ Id, Vgs:	102 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IPT60R102G7XTMA1 is a silicon-based n-channel field effect transistor (FET) designed for use as a switching device. This transistor has a high current-carrying capacity and can be used to switch large amounts of power with low resistance. The IPT60R102G7XTMA1 also features a low on-resistance, which makes it well-suited for high-efficiency applications. The IPT60R102G7XTMA1 is commonly used in the automotive, consumer electronics, and industrial control industries, as well as in other applications that require reliable, high-current switching. In this article, we will discuss the application field and working principle of the IPT60R102G7XTMA1.

Application Field

The IPT60R102G7XTMA1 is commonly used in automotive applications. It is often used in power switching applications such as engine cooling pumps, door locks, power windows, and other motor control systems. Its low-resistance on state makes it an ideal choice for switching large amounts of power with high efficiency.The IPT60R102G7XTMA1 is also popular in consumer electronics applications. It can be used as a power switch for applications such as LCD displays, DVDs, and other digital devices. Its low on-resistance makes it suitable for high-efficiency digital switching.The IPT60R102G7XTMA1 is also widely used in industrial control applications. It is often used in motors and other power-control applications such as solenoids, hydraulic valves, and electrical relays. Its high current handling capacity makes it an ideal choice for reliable control over large currents.

Working Principle

A field effect transistor (FET) is a type of transistor in which current is controlled by an electric field. The IPT60R102G7XTMA1 is an n-channel FET; it works by having the electric field applied to the n-type channel to control the flow of current. The n-type channel has a higher resistance than the p-type channel, which allows the transistor to act as a switch.When a voltage is applied to the gate, it attracts electrons from the n-type channel, allowing current to flow. The electric field causes electrons in the n-type channel to move away from the gate and towards the source, causing a decrease in resistance. This allows current to flow from the source to the drain, thus turning the FET on.When the voltage applied to the gate is removed, the electric field decreases and the electrons return to their original positions. This increases the resistance of the n-type channel, preventing current from flowing, thus turning the FET off.

Conclusion

The IPT60R102G7XTMA1 is a silicon-based n-channel field effect transistor designed for use as a switching device. It is commonly used in automotive, consumer electronics, and industrial control applications. The IPT60R102G7XTMA1 works by having the electric field applied to the n-type channel to control the flow of current. It has a low on-resistance, making it well-suited for high-efficiency applications.

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