IPU13N03LA G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPU13N03LA G application field and working principle

The IPU13N03LA G is a N-Channel enhancement mode power field effect transistor (FET), produced by Infineon Technologies AG. It is designed for use in medium voltage, low and medium current switching applications, such as consumer and industrial applications, telecom and computer systems, etc.

Basic principles

A FET is essentially a three-terminal device, consisting of a source, a drain, and a gate. The gate forms an insulated gate electric field, which controls the electrical properties of the channel between the source and the drain. By changing the electric field, the power FET alters the size of the channel, which consequently changes the current, and eventually the voltage, running through it.

The source is always the positive end of the current, the drain is the negative end, and the voltage applied to the gate will always be less than the source voltage. The drain current is proportional to the gate voltage, which increases with the increasing gate voltage. This means that, with a higher gate voltage, more electrons can flow through the channel, and therefore a higher drain current can be commanded. By switching the gate voltage OFF, the drain current can be cut off, by activating the transistor.

Application field

The IPU13N03LA G is designed to operate in a voltage range between 10 V and 500 V. With a DC gate threshold voltage of 1.5 V and a low on-resistance, the transistor can handle up to 1.4 A and 85 W of power. This makes it a perfect choice for use in medium voltage, low and medium current switching applications, such as consumer and industrial applications, telecom and computer systems, etc.

The device is also suitable for applications such as DC/DC converters, power smoothing and power backup, bridge rectifiers, radio equipment, lamps and valves, switching regulators, audio amplifiers, and many other low- and medium-voltage applications.

Block Diagram

The IPU13N03LA G includes an integrated protection circuit (IPC). This circuit has a number of components, which provide fault protection against over-current, over-voltage, auto-restart, and thermal shutdown. It ensures that the transistor is well protected against over-current and over-voltage conditions. Additionally, the circuit includes a thermal shutdown circuit, which will turn off the transistor if the temperature of the device goes beyond a certain level. This helps in increasing the reliability of the device.

Conclusion

The IPU13N03LA G is an N-Channel enhancement mode power field-effect transistor designed for use in medium voltage, low and medium current switching applications. The device has a gate threshold voltage of 1.5 V, a low on-resistance, and can handle up to 1.4 A and 85 W of power. It also features an integrated protection circuit for fault protection against over-current, over-voltage, auto-restart, and thermal shutdown.

The specific data is subject to PDF, and the above content is for reference