| Allicdata Part #: | IPU20N03LG-ND |
| Manufacturer Part#: |
IPU20N03L G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 30A IPAK |
| More Detail: | N-Channel 30V 30A (Tc) 60W (Tc) Through Hole P-TO2... |
| DataSheet: |  IPU20N03L G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | OptiMOS™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 60W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | P-TO251-3 |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IPU20N03L G is a type of single-channel, logic-level, N-channel, enhancement MOSFET. It is specifically designed for load switching and power control in portable equipment. This device has a high maximum current rating of 20 Amps and low on-resistance of 0.07 Ohms to help reduce power dissipation in automated systems and also offers high breakdown voltage of approximately 30V.
The IPU20N03L G MOSFET is used in many different types of applications, including power switching, DC/DC converters, industrial motor control and more. It is also very handy in applications where high power switching and low on-resistance is needed. The low on-resistance of the IPU20N03L G allows for efficient power switching, meaning less power is wasted when powering the system. Additionally, the high maximum current rating provides high current-handling capabilities, allowing it to handle higher power loads.
The operating principle of the IPU20N03L G is relatively simple to understand. When the gate voltage is greater than the source voltage, the drain current flows, otherwise it does not. Therefore, by adjusting the gate voltage, the amount of current flowing through the device can be regulated. This feature makes this device particularly useful in applications where precise control of power or current is needed.
Moreover, the IPU20N03L G has an RF immunity rating of 6V/m, which makes it ideal for use in radio-frequency applications. This is due to its high dielectric strength, meaning it can withstand high levels of RF energy without becoming damaged or degraded. This is especially useful in applications where radio frequencies are present.
Overall, the IPU20N03L G is an ideal choice for a wide range of applications where high power switching and low on-resistance are needed. It offers excellent current-handling capability, low on-resistance, a high breakdown voltage and an RF immunity rating of 6V/m. Additionally, by adjusting the gate voltage, the amount of current going through the device can be precisely regulated, making this device an ideal choice for applications where precise control of power or current is needed.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPU20N03L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A IPAKN... |
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