Allicdata Part #: | IPU78CN10NG-ND |
Manufacturer Part#: |
IPU78CN10N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 13A TO251-3 |
More Detail: | N-Channel 100V 13A (Tc) 31W (Tc) Through Hole PG-T... |
DataSheet: | IPU78CN10N G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 12µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 716pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPU78CN10N G device is a Insulated Gate Bipolar Transistor (IGBT). It is a three terminal device, with a source, a gate and an emitter, and it is capable of running at very high speeds. IPU78CN10N G are mostly used for high power switching applications, such as motor control, power grid applications, high frequency noise cancellation, and many other power control applications.
The device works by using an internal gate shut off voltage, which allows it to switch its output rapidly. The gate shut off voltage is usually set so that the device only has to be switched on and off by a few volts. This internal voltage is known as the "gate threshold voltage". In operation, the device is on when the voltage applied to the gate is higher than the threshold voltage, and is off when the voltage is lower than the threshold voltage.
The IPU78CN10N G device operates in the enhancement mode, meaning that the drain-source current does not flow until the gate voltage is higher than the threshold voltage. When the gate voltage drops below the threshold voltage, the drain-source current ceases immediately, making the device ideal for switching applications. The device also has a very low level of on-state voltage drop, which is beneficial for applications that require low power losses.
The IPU78CN10N G device has a maximum output current rating of up to 20A. It also comes with a built-in internal ESD and EMI protection, making the device more robust and less prone to spurious noise. Additionally, the device has a relatively low gate capacitance, which makes it suitable for high frequency switching applications.
The IPU78CN10N G device also has a reverse dv/dt protection, as well as a temperature protection circuit, which can protect the device from damage due to over temperature conditions. Additionally, the device offers a degree of gate current protection, which allows the device to be used in applications with higher input gate current requirements.
The IPU78CN10N G is a very versatile device, and due to its features and robustness, it is suitable for a wide range of applications. It is used in motor control, power grid applications, high frequency noise cancellation, and other power control applications. Additionally, the device can be used for voltage or current sensing applications, as it has built-in current sense amplifiers.
Overall, the IPU78CN10N G device is an ideal choice for a variety of power switching and control applications. It offers extremely low on-state voltage drop, gate current protection, reverse dv/dt protection, temperature protection, and ESD/EMI protection. Additionally, it has a low gate capacitance and is capable of running at very high speeds, making it suitable for high frequency switching applications. Therefore, the IPU78CN10N G device is an excellent choice for a variety of power control and switching applications.
The specific data is subject to PDF, and the above content is for reference
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