IPU95R450P7AKMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPU95R450P7AKMA1 is a silicon power MOSFET designed especially for power management, reverse battery protection, high-efficiency synchronous rectification and energy storage applications. This device is a single FET with a structure that is optimized for robust performance, including fast switching characteristics and low drain-source capacitance. It is especially suitable for operation in harsh environments, harsh operating temperature ranges and in high-frequency applications.

The drain-source breakdown voltage of the IPU95R450P7AKMA1 is rated at 450V, and it is specifically designed for use in applications that require high efficiency, reliability and robustness. In particular, the device allows for wide gate-drive and gate-source voltage ranges for improved flexibility. The high-peak drain current capability and low drain-source resistance yield low switching and conduction losses.

In terms of application fields, the IPU95R450P7AKMA1 is often used in power management systems such as solar inverters and hybrid-electric vehicle systems. It may also be used in various other applications such as ac-dc and dc-dc converters, adaptor circuits, lighting systems, white goods, and consumer electronics. This device is particularly attractive for applications that require extreme accuracy and power stability, as well as for high-reliability applications in harsh environments.

The working principle of the IPU95R450P7AKMA1 is fairly straightforward. The device works by using an insulated gate to control the electrical current between the gate and the source. This, in turn, controls the flow of electrons into the drain. When a higher voltage is applied, electrons can flow more freely, and a higher current will be produced. Conversely, when a lower voltage is applied, the flow of electrons is restricted, and a lower current is produced. This simple principle is what makes the IPU95R450P7AKMA1 an effective solution for many power management applications.

Overall, the IPU95R450P7AKMA1 is a versatile and reliable single FET device that is optimized for robust performance in power management, reverse battery protection, and energy storage applications. Its ability to provide wide gate-drive and gate-source voltage ranges ensure that this device can be used in a variety of different applications. Its fast switching characteristics and low drain-source capacitance make it an ideal solution for applications that require extreme accuracy and power stability, as well as for high-reliability applications in harsh environments.

The specific data is subject to PDF, and the above content is for reference