IPUH6N03LA G

Vgs(th) (Max) @ Id:	2V @ 30µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	PG-TO251-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2390pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPUH6N03LA G is an advanced metal oxide semiconductor field effect transistor (MOSFET) used in the high voltage circuit design industry. It is a single-gate MOSFET, meaning it contains only one gate electrode for control. It consists of three terminals that encompass the source, drain and gate. This type of MOSFET includes a wide range of applications due to its unique characteristics.The IPUH6N03LA G MOSFET has a drain-source breakdown voltage of 600 Volts and a continuous drain current of 9 Amps. It is suitable for switching and analog circuits in high voltage environments, including radio-frequency and high-power circuits. Applications with this MOSFET include motor speed controllers, switching power supplies, heater controls and other AC or DC power circuits. It is also used in applications that require minimal power dissipation.The IPUH6N03LA G has an efficient operating range; the gate voltage can range from -0.5 Volts to 8 Volts. This provides the flexibility to utilize a wide range of gate drives and amplifiers. Compared to bipolar transistors, the MOSFET has a low forward-voltage drop and minimal power dissipation during operation. This can save energy and boost efficiency in high voltage circuits. Furthermore, the low drain-source on resistance makes this type of transistor suitable for high speed and low noise applications.The MOSFET has an insulated-gate electrode, which separates it from the control to the drain and source voltage. This can be beneficial for switching, as the gate voltage does not require a direct connection with the switching element. The insulated gate electrode contains an oxide layer between it and the substrate material. This oxide layer is extremely thin and can prevent current flow when the gate voltage is below a certain threshold.So what is the working principle of the IPUH6N03LA G? When the voltage between the gate and the source is zero, current will flow freely between the source and the drain. However, when the gate voltage is higher than the drain and source voltage difference, the resistance between the drain and the source decreases. Ultimately, this will allow current flow between the drain and the source. This is known as the enhancement mode of operation.The IPUH6N03LA G is a very useful MOSFET for a wide range of applications, due to its low forward-voltage drop, low power dissipation, and high switching speed. It is also beneficial for its insulated-gate structure and high breakdown voltage. These unique characteristics make it perfect for high voltage circuits, such as motor controllers and switching power supplies, among others. Together, these features make the IPUH6N03LA G MOSFET an important component for a wide range of applications.

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