IPZA60R060P7XKSA1 Allicdata Electronics
Allicdata Part #:

IPZA60R060P7XKSA1-ND

Manufacturer Part#:

IPZA60R060P7XKSA1

Price: $ 5.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET TO247-4
More Detail: N-Channel 600V 48A (Tc) 164W (Tc) Through Hole PG-...
DataSheet: IPZA60R060P7XKSA1 datasheetIPZA60R060P7XKSA1 Datasheet/PDF
Quantity: 182
1 +: $ 5.21640
10 +: $ 4.69224
240 +: $ 3.85812
720 +: $ 3.23249
Stock 182Can Ship Immediately
$ 5.74
Specifications
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 164W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V
Vgs (Max): ±20V
Series: CoolMOS™ P7
Vgs(th) (Max) @ Id: 4V @ 800µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The IPZA60R060P7XKSA1 power FET is a member of Infineon’s Enhanced Avalanche Rugged Technology (EART) MOSFET family. It provides reliable switching performance, ruggedness and protection against transient voltage reversals. The device is designed for a variety of motor control applications, such as motor drive, motor control, and high power switched mode power supplies.

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is an active electronic device that is used as a switch or amplifier. MOSFETs are composed of several transistors, each transistor consisting of three layers of material called n-type and p-type semiconductors. The transistors of the MOSFET are connected in series, forming a three-terminal device.

At the heart of the IPZA60R060P7XKSA1 is the P-Channel MOSFET, which is a type of transistor that utilizes an electric field to modulate the conductance of a channel between two terminals. The two terminals are called the source and the drain, and the electric field is applied between them by an insulating layer of silicon dioxide (SiO2). The source and the drain are connected to two different types of semiconductors, forming a channel between them.

The physical structure of the IPZA60R060P7XKSA1 is the same as any other MOSFET. Its source and drain are connected to p- and n-type semiconductors, and the insulating layer between them consists of SiO2. Additionally, the device has three terminals, called the gate, drain and source. When voltage is applied to the gate, electrons become attracted to the p-layer, forming an inversion layer and allowing current to flow between the source and the drain. The amount and direction of the current is determined by the voltage applied to the gate.

The IPZA60R060P7XKSA1 combines several features that provide reliable switching performance and protection against transient voltage reversals. The device has a low gate-source capacitance, which reduces switching losses and minimizes switching noise. Additionally, the device comes with a dynamic dV/dt capability, which reduces the chances of electrical overstress. Finally, it has an avalanche ruggedness of up to 600 volts, reducing the chance of a breakdown.

The IPZA60R060P7XKSA1 is ideal for applications such as motor drive, motor control and high power switching mode power supplies. It can be used for high-side and low-side switching and is optimized for a variety of switching frequency and current requirement. It is suitable for both synchronous and asynchronous rectification, and can be used in applications such as soft-start, over-current protection and dynamic braking.

The IPZA60R060P7XKSA1 is a reliable and efficient switching device capable of providing reliable performance and protection against transient voltage reversals. It can be used in a variety of applications, ranging from motor drive and motor control to high power switching mode power supplies. It is suitable for a variety of switching frequencies and current requirements, and can be used for high-side and low-side switching.

The specific data is subject to PDF, and the above content is for reference

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