IR25602STRPBF Allicdata Electronics

IR25602STRPBF Integrated Circuits (ICs)

Allicdata Part #:

IR25602STRPBFTR-ND

Manufacturer Part#:

IR25602STRPBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC HALF BRIDGE DRIVER 8SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: IR25602STRPBF datasheetIR25602STRPBF Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 210mA, 360mA
Base Part Number: IR25602SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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An IR25602STRPBF can be classified as a PMIC – gate driver. A gate driver is an example of an application specific integrated circuit (ASIC) that is used to interface between low power input and high power output circuits, providing voltage amplification and driving capability at the same time. To understand the IR25602STRPBF\'s application field and working principle, it is important to understand how the entire ASIC works.

The IR25602STRPBF is an N-channel enhancement type MOSFET that is designed with an input voltage range of 3 to 5.5V and an output current range of 12V/1A. It is ideal for products that require high current and high power output. This is because the IR25602STRPBF is designed to provide high current and high power output with a low power input. This is made possible by the ASIC\'s dual high and low side FETs and an advanced level shifting circuit.

The dual high and low side FETs inside the ASIC provide a high current path for the output and a low current path for the input. The high side FETs are typically configured to be a drain-source voltage of 5V, while the low side FETs are typically configured to be 0V. This arrangement allows the circuit to provide high current and high power output with a low input power. Moreover, the level shifting circuit allows the input voltage to be shifted from the low side FETs to the output, without causing any damage to the device.

The IR25602STRPBF also includes a slew-rate control circuit, which is used to regulate the output voltage as the load current changes. This ensures that the output voltage is stabilized, regardless of the load current. This makes the ASIC ideal for applications where load current needs to be regulated for a safe, stable output.

The temporal displacement controller (TDC) of the ASIC is also a feature that sets it apart from other devices. The TDC provides a way to introduce timing into the operation of the device. This is beneficial in applications where critical timing relationships must be maintained, such as when controlling the speed of a motor. The TDC also helps to reduce the possibility of unexpected behavior of the gate driver.

The IR25602STRPBF is an ideal choice for applications that require high current and high power output with low power input. This is because the ASIC is designed to provide an efficient, reliable, and safe operation. In addition, the TDC feature helps to improve the reliability and accuracy of the circuit. With its advanced level shifting, slew-rate control, and temporal displacement controller, the IR25602STRPBF is a reliable and robust gate driver for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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