IR25603STRPBF Allicdata Electronics

IR25603STRPBF Integrated Circuits (ICs)

Allicdata Part #:

IR25603STRPBFTR-ND

Manufacturer Part#:

IR25603STRPBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC HALF BRIDGE SELF OSC 8SOIC
More Detail: Half-Bridge Gate Driver IC RC Input Circuit 8-SOIC
DataSheet: IR25603STRPBF datasheetIR25603STRPBF Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 180mA, 260mA
Base Part Number: IR25603
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 80ns, 45ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: RC Input Circuit
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10 V ~ 15.6 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IR25603STRPBF is a type of gate drivers which belongs to Positive-Drive low side drivers. It is designed tofor use in the automotive industry and other environments, where electrical connectivity and efficiency under extreme conditions is highly important. This positive-drive P-channel power MOSFET driver is specially designed to reduce the load losses of power MOSFET switching on the power grids and has a high-efficiency power supply design. In addition, there is built-in protection against current over heat, overvoltage and short circuit, and a thermal shutdown feature. Working Principle The IR25603STRPBF is generally used for low-side gate driving applications where a power MOSFET is used to switch between a high and a low state on an electronic circuit. It can be used to drive an N-Channel power MOSFET. When the gate driver is activated the P-channel MOSFET acts as a low side switch and connects the load to a low voltage source. The MOSFET operates as an open switch when no gate voltage is applied to the gate. When a driving voltage of 12V or greater is applied to the gate the P-channel MOSFET will conduct current and switch the load to a high voltage source. The IR25603STRPBF operates on a low voltage rail of 3.3V and requires a current limit of 6A which complies with the standard JEDEC specification. The gate driver features an advanced 9-bit logic and provides a buffer that is capable of driving up to 15V on the gate terminal. The gate driver contains internal circuits to protect the load from potential overvoltage and short-circuit conditions. The device also includes an advanced high-frequency power MOSFET driver for high efficiency of the switching operation. The IR25603STRPBF has been designed for wide range application field and can be used in the automotive industry, LED lighting, medical equipment and power management applications in the electronics industry. The device is compliant with the latest automotive suggested quality and reliability standards for gate drivers and has been used in many applications such as DC-DC converters, motor control and motor controllers.

Application Field

The IR25603STRPBF is designed to be used in the automotive industry and in other extreme conditions where electrical connectivity and efficiency are of importance. It can be used in applications such as DC-DC converters, motor control and motor controllers.The device is compliant with the JEDEC standard and features 9-bit logic and an advanced power MOSFET driver for improved efficiency when switching. It can be used in a variety of applications including in vehicle power distribution systems and mood lighting applications where a low side switch is needed.In addition, the IR25603STRPBF can be used for LED lighting applications as it has a built-in current limit of 6A and is capable of driving up to 15V on the gate terminal. The device is also suitable for medical applications where electrical safety is essential.

Conclusion

The IR25603STRPBF is a positive-drive low side gate driver designed to reduce the load losses of power MOSFET switching on the power grids. It is commonly used in the automotive industry and other harsh environments where electrical connectivity and efficiency must be high. The device includes built-in protection against current over heat, overvoltage and short circuit, and a thermal shutdown feature which increases its efficiency and reliability. The device is suitable for a wide range of applications such as DC-DC converters, motor control, LED lighting, and medical applications.

The specific data is subject to PDF, and the above content is for reference

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