IRC530PBF Allicdata Electronics
Allicdata Part #:

IRC530PBF-ND

Manufacturer Part#:

IRC530PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 14A TO-220-5
More Detail: N-Channel 100V 14A (Tc) 88W (Tc) Through Hole TO-2...
DataSheet: IRC530PBF datasheetIRC530PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-5
Supplier Device Package: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: Current Sensing
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRC530PBF is a kind of special field-effect transistors (FETs). It is a type of transistor that uses an electric field to control the flow of current. It is based on the principle of an insulated-gate field-effect transistor (IGFET). It is designed to operate as a voltage-controlled switch. IRC530PBF is a metal-oxide semiconductor field-effect transistor (MOSFET) which is one of the most popular devices used in modern electronics. It is widely used in various applications ranging from low voltage integrated circuits to high voltage switching, power conversion, and motor control.

IRC530PBF is a single metal-oxide-semiconductor field-effect transistor (MOSFET). It is a semiconductor device which consists of four terminals, namely the source, gate, drain, and substrate. It belongs to the family of FETs and MOSFETs, which have been widely employed in many types of analog and digital circuits. All MOSFETs consist of a metal-oxide-semiconductor structure, which is composed of an N-type semiconductor material sandwiched between two metal electrodes. The four terminals (source, gate, drain and substrate) allow current and voltage to be controlled efficiently. The IRC530PBF is a type of N-channel enhancement-mode MOSFET.

The basic working principle of the IRC530PBF is the principle of electrical field operation. It works on the principle of applying the voltage at the Gate terminal and controlling the flow of current from source to drain. This is done by creating a field between the Source and the Drain, with the Gate acting as a voltage-controlled switch. The voltage applied to the Gate determines the strength of the field and the current flow between the two terminals. If the Gate voltage is low, the field is weak and only a small amount of current can flow. If the Gate voltage is high, the field is strong and more current can flow.

The IRC530PBF has many applications in electronic circuits. It is used in the construction of analog and digital circuits, such as amplifiers and oscillators. It is also employed in power supplies, motor control, switching, rectifying and timing circuits. Furthermore, the IRC530PBF is also used as a gate driver in high power switching circuits. In addition, it is also used in various types of integrated circuits, such as operational amplifiers and voltage regulators.

In summary, the IRC530PBF is a type of single metal-oxide-semiconductor field-effect transistor (MOSFET) which is used in various types of circuits. It works on the principle of applying the voltage at the Gate terminal in order to control the flow of current from source to the drain. It can be used in analog and digital circuits, power supplies, motor control, switching and rectifying circuits, and gate drivers. The IRC530PBF is a very versatile device which has been widely used in many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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