| Allicdata Part #: | IRC640PBF-ND |
| Manufacturer Part#: |
IRC640PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 18A TO-220-5 |
| More Detail: | N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-... |
| DataSheet: |  IRC640PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-5 |
| Supplier Device Package: | TO-220-5 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | Current Sensing |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRC640PBF is an insulated gate field effect transistor (IGFET) designed for analog switching applications and provides an easy to use solution for signal switching. This transistor has an N-channel configuration, the highest on the market. It is very robust and has a low ON resistance, making it ideal for switching signals at low frequencies. Its gain is very high and its power dissipation is low, making it suitable for applications where power efficiency is important. Its operation is simple and the package includes a self-contained protective heat sink.
The working of the IRC640PBF is quite simple. The N-type conductive channel is formed in the substrate using the METATOP Gate [1]. The gate is a thin-film gate structured resistance of 5 ohm-cm, defined by two separate layers. The METATOP Gate is designed to provide a very low ON resistance and fast switching capabilities. When a voltage is applied to the gate, an electric field is created between the gate and the substrate, which in turn controls the flow of current between the source and drain of the transistor. An increase in gate voltage causes an increase in the current flow, and decrease causes a decrease in the current flow.
The IRC640PBF offers many advantages compared to other IGFETs. It has a very low threshold voltage and can operate at very low gate and drain voltages. This allows some unique power savings options, as well as a flexible range of operating points. It also has an excellent current to voltage ratio, along with a low power dissipation and a wide range of operation temperatures. All these advantages make the IRC640PBF an ideal choice for analog switching applications.
The IRC640PBF is widely used in many applications such as amplifiers, filters, and power switching. Its low on-resistance coupled with its wide range of operating points makes it suitable for fast switching applications, as it can quickly switch between “on” and “off” states. Its low power dissipation and high gain also make it popular for applications such as audio amplifiers, where power efficiency is important. Additionally, because of its low gate, drain and threshold voltages, it can provide considerable savings in battery powered applications.
In conclusion, the IRC640PBF is an excellent choice for many analog switching applications, due to its high gain, low power dissipation, and convenient packaging. It offers a wide range of operating points, and provides unique power savings options, which make it the perfect choice for battery powered applications. Its N-channel configuration is the highest on the market, and its low threshold voltage, along with its excellent current to voltage ratio, make it an ideal choice for switching signals at low frequencies. It also has a self-contained protective heat sink for added safety and reliability.
The specific data is subject to PDF, and the above content is for reference
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