| Allicdata Part #: | IRC740PBF-ND |
| Manufacturer Part#: |
IRC740PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 400V 10A TO-220-5 |
| More Detail: | N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-... |
| DataSheet: |  IRC740PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-5 |
| Supplier Device Package: | TO-220-5 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | Current Sensing |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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.The IRC740PBF is a potentiometer-controlled enhancement mode depletion mode Field Effect Transistor (FET). It is a single FET package, designed to be able to handle supply voltages higher than the conventional plastic FET packages. It is the perfect choice for high precision applications, particularly for oscillator and amplifier circuits.
The IRC740PBF has a wide operation range and can handle a maximum of 250V, making it suitable for a variety of applications. It has a high current gain, low on-resistance, low gate-source leakage, and withstands high supply voltage. This makes it ideal for applications such as audio amplifiers, motor control, and voltage-controlled amplifiers (VCAs).
The IRC740PBF has two isolated gates, allowing for independent control of the source, drain, and gate terminals. Its two gates are connected through an internal resistor between the two gates, allowing for a linear variable resistance when the gate voltage is increased. This allows for more precise adjustment of the FET characteristics.
In operation, the gate of the FET is controlled by a potentiometer to adjust its parameters. This potentiometer is connected between the gate and source terminals, and can be used to increase or decrease the current gain and the on-resistance of the device.
The IRC740PBF offers excellent circuit stability due to its low on-resistance. It is designed to operate at high frequencies, making it ideal for applications such as switching power converters, audio amplifiers, and motor control circuits. It is also an excellent choice for applications that require the precise control of high power devices, since the potentiometer is able to precisely adjust the FET parameters.
The IRC740PBF is ideal for use in a variety of applications, as it offers high current gains and precise control of the FET parameters, while still allowing for low on-resistance and high power capabilities. Its wide operating range and high supply voltage capability make it perfect for a variety of circuits, while its two isolated gates and potentiometer control enable precise and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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