| Allicdata Part #: | IRC840PBF-ND |
| Manufacturer Part#: |
IRC840PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 8A TO-220-5 |
| More Detail: | N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-2... |
| DataSheet: |  IRC840PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-5 |
| Supplier Device Package: | TO-220-5 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | Current Sensing |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRC840PBF is a laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) designed for applications such as high-use, high-power amplifiers in the cell phone, WCDMA and EDGE amplifiers and power supply voltage regulators. It is a highly reliable, superior performance transistor made of state-of-the-art semiconductor process.
The IRC840PBF is a monolithic integrated circuit with a single N-channel enhancement type MOSFET structure. The source and drain terminals are connected to opposite ends of a single silicon substrate, and the gate is located between the two terminals. This structure is designed to allow for current to flow between the source and drain regions by creating a channel of mobile charge carriers in the substrate when a voltage is applied to the gate terminal.
The IRC840PBF has a high input and output impedance, which makes it ideal for applications in which noise must be minimized. The high input impedance also allows it to be used as a linear amplifier by applying a bias voltage to the gate. The output impedance allows the device to be used in wideband applications due to its fast switching speed. Additionally, the IRC840PBF has a low thermal resistance which helps reduce power consumption when used in high power applications.
The IRC840PBF has a number of features that make it well suited for use in a variety of applications. For example, its high breakdown voltage allows it to be used in a wide range of voltage levels, making it useful in many different types of circuit designs. Additionally, the low on-resistance of the device makes it an excellent choice for high-power applications as it is capable of passing larger amounts of current through the device than would be possible with other types of transistors.
The IRC840PBF also offers a wide range of package options. It is available in packages ranging from a 6-pin to 8-pin dual-inline-package (DIP), surface mount technology (SMT), through-hole, and discrete packages. This wide selection of packaging helps ensure that it can be used in virtually any application. Additionally, the IRC840PBF is available in both RoHS and non-RoHS compliant packages, making it suitable for use in many different types of electronics, making it a highly cost-effective device.
The IRC840PBF is a highly reliable, efficient and cost-effective power device. Its wide range of features makes it suitable for use in a variety of applications, from high-power amplifiers to voltage regulators. Its high input and output impedance, as well as its low thermal resistance, make it a great choice for applications where noise or heat must be kept to a minimum. Additionally, its wide range of package options make it easy to integrate into almost any application.
The specific data is subject to PDF, and the above content is for reference
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