| Allicdata Part #: | IRCZ24PBF-ND |
| Manufacturer Part#: |
IRCZ24PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 55V 17A TO-220-5 |
| More Detail: | N-Channel 55V 17A (Tc) 60W (Tc) Through Hole TO-22... |
| DataSheet: |  IRCZ24PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-5 |
| Supplier Device Package: | TO-220-5 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | Current Sensing |
| Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRCZ24PBF is a single channel, two-terminal, N-channel Field Effect Transistor (FET) suitable for analog and digital control applications. The device features a self-aligned silicon gate and is designed for compact, low voltage, and reliable operations. The PBF suffix indicates that the device is packaged in a reduced-lead PBF package.
The IRCZ24PBF is an enhancement-mode N-type MOSFET, which means the device needs a positive gate-source potential to switch on. It has an off-state output resistance of 24 ohms and a gate threshold voltage of -2.0V. It has a breakdown voltage of 24V and an on-state drain current of 0.5A RDS(on). The device is rated for a continuous drain current of 0.30A.
The IRCZ24PBF features a reduced lead package design, eliminating the need for hole drilling and soldering of components, decreasing the size of the device and reducing the labor required for installation. The device has two leads for electrical connection – the source and the drain. The source is the input and the drain is the output of the device. The gate of the device is internally connected to a substrate, and is also used to control the on/off state of the device.
In order for the IRCZ24PBF to operate in the on-state, a positive gate-source bias voltage (VGS) must be applied to the gate of the device by supplying a potential difference between the gate and the source. This potential difference (VGS) must be higher than the threshold voltage (VTh) of the device. When the gate voltage is high enough, the device current will start conducting and the transistor will be in the on-state. The amount of current that can be conducted by the device is then proportional to the applied gate-source voltage.
The IRCZ24PBF is used in a variety of applications, including switching, high-speed circuit control, computer and networking applications, and the DC power supply. The device can be used for switching operations, such as semiconductor relays, choppers, and optical switches. It is also used in high speed digital logic applications, such as logic level conversion, logic replacement, and memory decoding. In addition, the device is used in power-switching circuits and DC power supplies, such as LED drivers and DC-DC converters. The IRCZ24PBF is also used in computing and networking applications, such as ethernet termination, network switch control, and data transmission.
The IRCZ24PBF is a versatile device that can be used in a wide variety of applications. It is easy to use, requires minimal wiring and configuration, and is reliable and robust. For these reasons, the device is a popular choice for analog and digital control applications.
The specific data is subject to PDF, and the above content is for reference
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