IRFNL210BTA-FP001

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The IRFNL210BTA-FP001 is a Power MOSFET designed to provide high switching performance in a wide range of applications. It is a low side switch with an N-channel MOSFET design with a breakdown voltage of 210 V and a guaranteed minimum drain-source on-state resistance of 2.6 Ohms.

This Power MOSFET is ideal for automotive and appliance applications such as lighting, HVAC, and motor drive applications. It has a gate-source voltage of 10 V, gate drive of 5 V, and a gate capacitance of 9.9 pF. It features a high current capability of up to 80 A continuous and ultra-low on-state resistances for improved power efficiency.

The IRFNL210BTA-FP001 is ideal for seeing high-drain currents while providing a low total gate charge and a low barrier height to reduce the total on-resistance. It’s also capable of seeing up to 80 A without any de-rating allowing for higher switching speeds for improved system efficiency. This Power MOSFET is also designed with an ultra-low RDS(on) to reduce power dissipation and increase system efficiency.

In terms of construction, the IRFNL210BTA-FP001 is constructed in a space-saving package which is suitable for higher power densities and higher gate-source voltage requirements. Its rugged construction protects the device from mechanical and thermal shocks, ensuring reliable heat dissipation and longer life.

As far as application fields are concerned, the IRFNL210BTA-FP001 Power MOSFET is commonly used in high-voltage and high-current switching applications. It is particularly suitable for applications such as lamp drivers, AC/DC inverters, motor drivers, HVAC motor controllers, home appliances, and solar inverters.

The IRFNL210BTA-FP001 Power MOSFET works by utilizing the effect of a MOSFET transistor with an “enhancement-mode” operation, meaning that it needs to be energized in order to turn ON. When the gate-source voltage is applied to the device, the electric field between the gate and drain-source regions induce a depletion region between them, bringing the device into a high-conductive state. This high-conductive state allows current (charge) to flow through the device.

Furthermore, when the gate-source voltage is removed, the depletion region is removed and the device is brought into a high-resistance state, blocking any charge flow through the device. This is an effective and efficient way to control the flow of current in an application, making the IRFNL210BTA-FP001 an ideal choice for many high-current applications.

The IRFNL210BTA-FP001 Power MOSFET is a reliable and efficient device, suitable for high-voltage and high-current power applications. It is designed to provide high switching performance, excellent thermal management and long life without sacrificing power efficiency and switching speed. Its rugged construction, low gate-source voltage, and low barrier height make this device an excellent choice for many high-voltage and high-current applications.

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