IRFTS8342TRPBF Allicdata Electronics
Allicdata Part #:

IRFTS8342TRPBFTR-ND

Manufacturer Part#:

IRFTS8342TRPBF

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.2A 6TSOP
More Detail: N-Channel 30V 8.2A (Ta) 2W (Ta) Surface Mount 6-TS...
DataSheet: IRFTS8342TRPBF datasheetIRFTS8342TRPBF Datasheet/PDF
Quantity: 3000
1 +: $ 0.13000
10 +: $ 0.12610
100 +: $ 0.12350
1000 +: $ 0.12090
10000 +: $ 0.11700
Stock 3000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFTS8342TRPBF is a single high-voltage, DirectFET MOSFET from International Rectifier (IR). It is designed for power switching with low-voltage surface mounting applications. This MOSFET is rated for 20.4V, pulsed currents up to 800A and static drain-source on-state resistance of only 0.018 ohms. This makes it a great choice for motor drives, solar/inverter systems and any other load management needs.

The IRFTS8342TRPBF is a P-channel, single-gate, DirectFET MOSFET. It has a trench structure field-effect gate that provides superior gate-charge characteristics compared to standard dual gate MOSFETs. Its superior switching properties make it suitable for high-frequency switching, soft-switching applications and high-current load management. Its low on-state resistance and low gate charge reduce switching losses and minimize power dissipation.

The IRFTS8342TRPBF features both fast switching speed and high-temperature stability. This makes it suitable for applications under high-temperature conditions such as automotive power management systems or power management systems in high-density electronic systems. Its low saturation voltage also makes it suitable for low-voltage peak current applications.

The IRFTS8342TRPBF is suitable for applications such as motor control, DC-AC converters, solar inverters, electrical vehicle charging systems, UPS systems and many other load management needs. It is also suitable for switching applications at high frequencies such as motor drives, DC motors, AC motors, ignition systems and other high-frequency inductive loads. Its low on-state resistance, low gate charge and fast switching speed make it a great choice for power management.

The IRFTS8342TRPBF works on the principle of a MOSFET, which is a voltage-controlled FET. A FET is a type of transistor which uses voltage to control current flow. This device combines three regions: source, drain and gate. Electric current flows between the source and the drain when a voltage is applied to the gate. The gate voltage determines the amount of current that flows between the source and drain, which also determines how much power is being managed. By controlling the gate voltage, the IRFTS8342TRPBF can be used to control or manage current flow in a variety of applications.

In summary, the IRFTS8342TRPBF single high-voltage, DirectFET MOSFET from International Rectifier offers superior switching capabilities and fast switching speed, making it ideal for power switching applications. It is suitable for applications such as motor control, solar inverters, dc-ac converters, charging systems, UPS systems, ignition systems and other high-frequency inductive loads. Its low on-state resistance, low gate charge and fast switching speed make it suitable for load management needs, and its superior switching properties make it a great choice for power management.

The specific data is subject to PDF, and the above content is for reference

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