IRGS4062DPBF Allicdata Electronics
Allicdata Part #:

IRGS4062DPBF-ND

Manufacturer Part#:

IRGS4062DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 48A 250W D2PAK
More Detail: IGBT Trench 600V 48A 250W Surface Mount D2PAK
DataSheet: IRGS4062DPBF datasheetIRGS4062DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 115µJ (on), 600µJ (off)
Base Part Number: IRGS4062DPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 89ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 41ns/104ns
Gate Charge: 50nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Current - Collector Pulsed (Icm): 96A
Current - Collector (Ic) (Max): 48A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRGS4062DPBF is a type of IGBT, or Insulated Gate Bipolar Transistor. It is capable of handling high voltages and current and is used in a variety of electronic applications, such as motor drives, welding, and power converters. In this article, we will discuss the application field and working principle of the IRGS4062DPBF.

An IGBT is a type of power semiconductor device which combines the benefits of both a bipolar transistor and a Metal-Oxide-Semiconductor field-effect transistor (MOSFET). It is composed of two components, a P-type MOSFET and an N-type MOSFET. This combination allows for the device to have both high input impedance and high output current capability, making it an ideal choice for applications where high current and voltage are required.

The IRGS4062DPBF is a single-channel IGBT which can handle a maximum voltage of 1000V, and a maximum current of 400A. It is used in applications such as motor drives, welding, and power converters. It can handle large amounts of power, making it an ideal choice for these types of applications.

The IRGS4062DPBF has an on-state resistance of only 0.84 milliohms, indicating a high efficiency. It also has a high speed switching rate, allowing for fast control of its output. Furthermore, the IRGS4062DPBF is designed for reverse conduction protection, providing improved safety for equipment applications.

The working principle of the IRGS4062DPBF is similar to other IGBTs. When the gate of the device is energized, the electric current flowing between the collector and the emitter increases, thus increasing the amount of energy the device can handle. When the gate is de-energized, the electric current flow reduces and the device ceases to produce power.

The IRGS4062DPBF is capable of providing reliable and efficient performance, making it an excellent choice in a variety of electronic applications. Its high input impedance and high output current capability make it an ideal choice for applications demanding high power and voltage. Additionally, its reverse conduction protection provides improved safety for equipment applications.

In conclusion, the IRGS4062DPBF is a type of IGBT that is capable of handling high voltages and current. It is used in applications such as motor drives, welding, and power converters. Its working principle involves the gate being energized or de-energized, thus controlling the amount of power produced by the device. The IRGS4062DPBF provides reliable and efficient performance, and is an ideal choice for applications where high power and voltage are required.

The specific data is subject to PDF, and the above content is for reference

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