IRGS30B60KTRRP Allicdata Electronics
Allicdata Part #:

IRGS30B60KTRRPTR-ND

Manufacturer Part#:

IRGS30B60KTRRP

Price: $ 1.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 78A 370W D2PAK
More Detail: IGBT NPT 600V 78A 370W Surface Mount D2PAK
DataSheet: IRGS30B60KTRRP datasheetIRGS30B60KTRRP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.59000
10 +: $ 1.54230
100 +: $ 1.51050
1000 +: $ 1.47870
10000 +: $ 1.43100
Stock 1000Can Ship Immediately
$ 1.59
Specifications
Power - Max: 370W
Base Part Number: IRGS30B60KPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: 46ns/185ns
Gate Charge: 102nC
Input Type: Standard
Switching Energy: 350µJ (on), 825µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 78A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The IRGS30B60KTRRP is considered one of the most advanced single IGBTs on the market today. It is a high-voltage IGBT that offers superior performance and reliability. When used in combination with well-designed external components, the IGBT can be used in a wide variety of high-power applications, such as high-voltage AC and DC drives, motor control drives, and electrical power conversion. This article will describe the application field and working principle of the IRGS30B60KTRRP.

The IRGS30B60KTRRP is an integrated gate-commutated thyristor (IGBT) designed for high-voltage switching applications. It is an internally equipped current sharing gate with the ability to achieve a low gate-through resistance. The IGBT has a wide range of operating conditions that allow it to be suitable for a variety of power conversion applications. It is also capable of fast switching, which is a critical factor in high-power applications. The IGBT is rated for up to 30V, 60A and 91Kg/m2 of power. Furthermore, its high-speed switching characteristics make it ideal for applications that require precise current regulation.

The IRGS30B60KTRRP has its own built-in logic that allows it to be used with a wide variety of external devices. It is also capable of detecting short circuits, reverse current, overvoltage, and undervoltage. All of these capabilities make it ideal for use in high-voltage applications, reducing the need for external protection devices. Furthermore, its low gate-through voltage permits it to be used in a wide variety of AC and DC drives. The IGBT also has a wide operating temperature range of up to -40ºC to +125ºC.

The IRGS30B60KTRRP’s working principle is similar to that of other IGBTs. It is essentially a combination of a thyristor and a transistor. When a control voltage is applied to its gate, the IGBT switches on and current begins to flow through its collector-emitter terminals. The IGBT is controlled by its built-in logic, which allows precise control of the amount of current flowing through the circuit. Furthermore, the IGBT can be used to turn on and off the flow of current, allowing it to perform more precise control of power delivery in high-power applications.

The IRGS30B60KTRRP is an advanced single IGBT designed for high-voltage switching applications. Its low gate-through resistance and built-in logic allow it to be used in a variety of power conversion applications. Its fast switching characteristics make it ideal for precise current regulation in high-power applications. Additionally, its wide operating temperature range and protection features make it suitable for harsh environments. Overall, the IRGS30B60KTRRP is a reliable and efficient choice for high-voltage and high-power applications.

The specific data is subject to PDF, and the above content is for reference

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