IRGS14C40LPBF Allicdata Electronics
Allicdata Part #:

IRGS14C40LPBF-ND

Manufacturer Part#:

IRGS14C40LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 430V 20A 125W D2PAK
More Detail: IGBT 430V 20A 125W Surface Mount D2PAK
DataSheet: IRGS14C40LPBF datasheetIRGS14C40LPBF Datasheet/PDF
Quantity: 346
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 346Can Ship Immediately
Specifications
Switching Energy: --
Base Part Number: IRGS14C40LPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27nC
Input Type: Logic
Series: --
Power - Max: 125W
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 430V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRGS14C40LPBF is a single IGBT (Insulated Gate Bipolar Transistor) designed to provide high efficiency and easy sorting when used in power electronics applications. This device is designed on a high voltage, low voltage, double sided process and incorporates an emitter terminal that is voltage controlled. The IRGS14C40LPBF has a characteristic blocking voltage of 800V and a current gain of 40A. It is mainly used for switching applications and is rated for a continuous collector current of 40A.

The IGBT, being a voltage-controlled bipolar transistor, relies on the combination of the negative resistance property of a MOSFET and the voltage-controlled switching of a bipolar transistor to realize high efficiency within a single device. The primary benefit of the IGBT is its lower on-state voltage drop, enabling higher efficiency for switching power circuits. The gate-emitter junction of the IGBT is built with an insulated gate, preventing the short circuiting of the gate-emitter junction and allowing the gate to be controlled by an external voltage source.

As a switching device, IGBTs can be found in applications such as motor control, industrial heating and welding, AC motor drives, solar inverters and uninterruptible power supplies. In PWM (Pulse Width Modulation) applications, the IRGS14C40LPBF can provide high efficiency and low switching losses due to its high gain, low on-state voltage drop, and high current density.

In PWM applications, the IGBTs are controlled by the application of an external voltage source such as a microcontroller or digital signal processor. The external voltage source is used to control the triggering of the IGBT gate and hence the switching of the power devices. The IGBT is triggered by applying a voltage level to the gate-emitter junction. When the voltage applied is above a predetermined voltage, the IGBT turns on, allowing the current to flow between the collector and emitter. When the voltage applied is below a predetermined voltage, the IGBT turns off, and the current is stopped.

The IRGS14C40LPBF is also suitable for applications that require high frequency switching, such as DC-DC converters, AC motor drives, xenon headlight dimming and frequency converters. In these types of applications, the IGBTs provide high switching frequency and fast double pulse operating speeds to ensure high levels of efficiency and low power losses.

In summary, the IRGS14C40LPBF is an insulated gate bipolar transistor which is used for a variety of power electronics applications due to its low detuning, low noise, and excellent switching properties. Due to its high pulse rate and voltage blocking characteristics, the device is suitable for many different applications such as motor control, DC-DC converters, AC motor drives, and switching applications. Moreover, its optimized gate structure helps to keep the temperature low during high power operations.

The specific data is subject to PDF, and the above content is for reference

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