IRGS6B60KDTRLP Datasheet/PDFIRGS6B60KDTRLP is a high-voltage, high-speed, isolation type insulated gate bipolar transistor (IGBT) module developed by Infineon Technologies. It is suitable for various power conversion applications, such as motor control, renewable energy, and uninterruptible power supplies. It is characterized by low conduction losses and low switching losses. Moreover, its built-in diode with long, soft recovery can reduce the surge currents in motor switching.
An IGBT module is composed of several IGBTs. The structure of IRGS6B60KDTRLP is based on the latest patented direct copper bond technology (DCB). It uses the stacked IGBT structure, which is composed of two IGBTs connected in series inside, which can reduce the insulated gate drive voltage to about half and reduce the power loss. The chip is isolated from the package by a ceramic substrate, which provides excellent thermal performance. The insulation distance between the emitter and collector is more than 8mm. It also uses an advanced epoxy bonding process to ensure ultra-low parasitic inductances. These features make it one of the best power semiconductor devices available today.
Application of IRGS6B60KDTRLP is mainly used in power electronics, such as motor control, renewable energy, uninterruptible power supplies, UPS, and electronic lighting application fields etc. It can process the input AC power and convert it into different forms of DC power according to the requirements of the load. It can also convert DC power from batteries into higher or lower voltage DC output power.
The working principle of IRGS6B60KDTRLP is based on the typical four-layer IGBTs structure. The upper two layers are composed of an N+ well and an N+ emitter, which form an N type semiconductor. The two bottom layers are composed of a P+ well and a P+ collector, which form a P type semiconductor. The N type and P type semiconductors are separated by a thin layer of P-type material, which is known as the base layer. With the continuously injected current, the electrons in the N-region start to move towards the P- region while the holes in the P-region start to move towards the N- region. This will cause the current flow between the N-region and the P-region and generate voltages across the N-region and the P-region.
When the insulated gate is driven by an external signal such as pulse width modulation, it can control the amount of current that can flow through the N-region and P-region. By controlling the current, the voltage and power can be precisely controlled. The advantages of this kind of transistor lie in its high current gain, low on voltage, low on-resistance, high reliability and its ability to deliver high power.
In conclusion, IRGS6B60KDTRLP is a versatile, high-performance IGBT module. It is suitable for various power conversion applications such as motor control, renewable energy, and electronic lighting applications. Its built-in diode with long, soft recovery and direct copper bond technology can reduce the surge currents in motor switching and power losses. The unique four-layer structure and insulated gate drive provide high reliability and precision voltage and power control.