IRGS15B60KDPBF Allicdata Electronics
Allicdata Part #:

IRGS15B60KDPBF-ND

Manufacturer Part#:

IRGS15B60KDPBF

Price: $ 1.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 31A 208W D2PAK
More Detail: IGBT NPT 600V 31A 208W Surface Mount D2PAK
DataSheet: IRGS15B60KDPBF datasheetIRGS15B60KDPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 1.42257
Stock 1000Can Ship Immediately
$ 1.57
Specifications
Switching Energy: 220µJ (on), 340µJ (off)
Base Part Number: IRGS15B60KDPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 92ns
Test Condition: 400V, 15A, 22 Ohm, 15V
Td (on/off) @ 25°C: 34ns/184ns
Gate Charge: 56nC
Input Type: Standard
Series: --
Power - Max: 208W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Current - Collector Pulsed (Icm): 62A
Current - Collector (Ic) (Max): 31A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRGS15B60KDPBF is an insulated-gate bipolar transistor (IGBT) that belongs to the ‘transistors - IGBTs – single’ category. It is one of the most popular IGBTs in the market and is one of the leaders in its class when it comes to the power handling capabilities. Before discussing the applications and working principles of the IRGS15B60KDPBF, an understanding of how IGBTs differ from other common transistors is important.

An IGBT is a three-terminal power semiconductor device, made up of a normally-off bipolar junction transistor (BJT) and an enhancement mode MOSFET, connected in series. The main difference between IGBTs and other transistors is that IGBTs are not just a switch, but also act transistorally, and have the property of controlled current flow. This capability makes them an excellent choice for power management and switching applications. As such, they are widely used in the automotive and industrial industries, as well as other applications.

The IRGS15B60KDPBF is a high voltage IGBT that is suitable for applications requiring up to 600V isolation. This IGBT has a peak off-state voltage of 600V and a high forward current rating of 1.5A. It also has a high frequency switching capability of up to 35 kHz. This makes it ideal for high frequency and low voltage applications such as motor control, power conversion, and power factor correction. Furthermore, it features a low on-voltage drop and a low gate charge, making it energy efficient for the end user.

The working principle of the IRGS15B60KDPBF is relatively simple. It is composed of three terminals – collector, emitter, and gate – and operates using a similar principle to a BJT. When a voltage is applied to the gate terminal, an electric field is created between the gate and the emitter, which allows current to flow through the device. The resulting current is rectangular in nature and can be regulated through the application of higher or lower gate voltages. Additionally, the device has the ability to switch on and off quickly, which is beneficial for power factor correction applications.

The IRGS15B60KDPBF is a dependable and efficient device that is suitable for a variety of applications. It is ideal for motor control, inverters, power factor correction, power conversion, and other high frequency applications. It is also able to interface with the majority of popular microcontrollers, making it easy to integrate into existing systems. This makes the IRGS15B60KDPBF a highly desirable device and presents a significant advantage over other transistors in its class.

The specific data is subject to PDF, and the above content is for reference

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