IRL40B212

Vgs(th) (Max) @ Id:	2.4V @ 150µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	231W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8320pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	137nC @ 4.5V
Series:	HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:	1.9 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRL40B212 is a field effect transistor (FET) manufactured by Infineon Technologies AG. It is a single FET designed specifically for use in high power switching applications. It is commonly used in power converters, motor control circuits, power factor correction circuits, and other power management applications.The IRL40B212 is a MOSFET, which is a type of semiconductor device used to amplify or switch electronic signals. It is made up of a gate, source, and drain. The gate acts as the control element and modulates the current’s flow between the source and drain. When a voltage is applied to the gate, it changes the resistance between the source and drain and allows current to flow through the channel.In the IRL40B212, the drain current is controlled by a voltage applied to the gate. This voltage is called the gate-to-source voltage (Vgs) and is measured in volts. When the Vgs is above a certain value, the device is “on” and current can flow through it. When the Vgs is below a certain value, the device is “off” and the current cannot flow. Therefore, the IRL40B212 acts as a switch, which can be turned on or off using a voltage applied to the gate.The IRL40B212 has an RDSón rating of 17 mΩ, which indicates the amount of resistance that occurs when the device is “on.” This low resistance allows current to flow more easily through the device, resulting in higher speeds. The IRL40B212 also has a low gate charge (Qgs) of 0.85 nC, which helps reduce switching losses.The IRL40B212 also has good thermal performance. It has a maximum temperature rating of 150 degrees Celsius, which makes it suitable for operation in high temperature environments. It also has a high drain-source breakdown voltage rating of 20V, which indicates the voltage at which the device will begin to breakdown and cease to function.The IRL40B212 is a robust and efficient device that is suitable for use in a variety of applications. It has a low on-resistance and gate charge, which makes it suitable for high power switching applications. It also has a high temperature rating and drain-source breakdown voltage rating, making it suitable for use in harsh environments. Finally, its low gate threshold voltage of 0.8V makes it ideal for use in low voltage applications.

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