IRL7486MTRPBF

Series:	HEXFET®, StrongIRFET™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	209A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.25 mOhm @ 123A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	111nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6904pF @ 25V
FET Feature:	--
Power Dissipation (Max):	104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DirectFET™ Isometric ME
Package / Case:	DirectFET™ Isometric ME

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IRL7486MTRPBF Application Field and Working PrincipleThe IRL7486MTRPBF, manufactured by Infineon Technologies, is a surface-mount Power MOSFET, a type of field-effect transistor (FET). FETs are unipolar devices, meaning that neither a negative nor a positive voltage is necessary for it to function. It features very low rDS(on) values, making it a suitable choice for high-current applications. It is also capable of operating at high frequencies, making it suitable for advanced switching power supplies and motor controls.The IRL7486MTRPBF is a single-channel, dual-gate MOSFET. The dual-gate structure allows for the gate-source voltage to be reduced, so that the voltage for the second gate is lower than for the first. This means that the second gate is able to operate at lower voltages than the first. This enables faster switching times and lower parasitic losses.The IRL7486MTRPBF is suitable for use in a variety of applications, including buck converters and high-current, high-frequency motor control applications. It can handle up to 150 Volts and can handle up to 12A of continuous drain current (ID), as well as up to 25A of pulsed drain current (IDP). At temperatures between 10-25°C, it has a maximum drain-source On-state resistance of only 0.08 Ohm.The IRL7486MTRPBF is designed to operate in a VGS and pulsed mode, the latter involving the application of a range of gate voltages. In the pulsed mode, the device will operate at a lower voltage but with a higher drain-source On-state resistance, making it suitable for low-voltage, high-current applications.The working principle of the IRL7486MTRPBF involves the use of strong electric fields to control the conductivity of the channel. When a gate-source voltage is applied, an electric field is generated between the gate and the source, resulting in an inversion layer. This layer reverses the polarity of the channel, leading to a decrease in its resistance and thus an increase in its conductivity. This allows electricity to flow from the drain to the source. When the gate-source voltage is removed, the electric field also disappears and the inversion layer dissipates, leading to an increase in the channel\'s resistance and thus a decrease in its conductivity. In this way, the IRL7486MTRPBF acts as a switch, allowing current to flow only when the gate-source voltage is applied.The IRL7486MTRPBF is a robust, reliable, and effective MOSFET and is suitable for many different applications. It is capable of operating at low voltages, high currents and high frequencies, making it ideal for advanced switching power supplies and motor controls. It can handle large loads with minimal loss due to its low rDS(on) values. Additionally, it has a wide temperature range and can handle up to 150 Volts. All in all, the IRL7486MTRPBF is a powerful and versatile device that can be used in a variety of applications.

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