
Allicdata Part #: | IRLC8256ED-ND |
Manufacturer Part#: |
IRLC8256ED |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH WAFER |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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IRLC8256ED is a type of single N-Channel enhancement mode Field Effect Transistor (FET). It is a hot-swap MOSFET has two terminal: Source and Drain. The Source terminal is the control control terminal and the Gate terminal is the input control terminal that modifies the current flow through the device.
IRLC8256ED has advanced low on-resistance and extremely low gate charge Qg. The advantages of the IRLC8256ED over the other FETs are its low capacitance stability and its own patented enhanced MOSFET (EMOSFET) technology. These features not only make it suitable for hot-swap applications, but also can support high speed switching and greater power efficiency.
The main application of IRLC8256ED is to control the circuit current. It can be used as a switch, amplifier or voltage regulator in electronic circuits. IRLC8256ED can be used in step up/down switching applications, battery charger, solar power components, switching power supplies, mobile device power management, battery management systems, DC/DC converter and many more.
The IRLC8256ED works based on two principles: electrochemical potential and transistor action. First, it works on electrochemical potential. This potential is used to drive electrons through the device, which then allow the current to flow. Secondly, it works on transistor action. The Gate terminal is used to control the amount of current that passes through the transistor. By adjusting the Gate voltage, small changes can be made in the current.
IRLC8256ED is a great tool for applications demanding high switching performance and high efficiency. It has a wide gate tolerance, low gate charge and is able to support high power rates. It is very efficient in maintaining a certain switching speed and also provides a better current and thermal performance. The advanced MOSFET technology integrated in the IRLC8256ED, makes it suitable for high switching and greater power efficiency.
In conclusion, the IRLC8256ED is an ideal Field Effect Transistor for hot-swap applications due to its low on-resistance and gate charge. It uses two principles: electrochemical potential and transistor action to provide a better current and thermal performance. It can be used in many applications such as a switch, amplifier or voltage regulator, battery charger, power supplies, mobile device power management and more.
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