Allicdata Part #: | IRLP3034PBF-ND |
Manufacturer Part#: |
IRLP3034PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 195A TO-247AC |
More Detail: | N-Channel 40V 195A (Tc) 341W (Tc) Through Hole TO-... |
DataSheet: | IRLP3034PBF Datasheet/PDF |
Quantity: | 605 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 341W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10315pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 162nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRLP3034PBF is a single P-channel MOSFET that is commonly used in electric engineering applications. It is a part of Infineon\'s Power MOSFET family and is widely used in the consumer and industrial markets. The IRLP3034PBF is a highly reliable, cost-effective, easy to use component ideal for a variety of applications including power management, motor control, and power storage systems.
The IRLP3034PBF is an extremely robust component that is able to withstand a wide range of environmental conditions. It offers high junction temperatures and excellent thermal management so that it can remain functional in extreme conditions. Additionally, the IRLP3034PBF is designed to handle high currents with its high current capability, and has a low on-resistance for greater efficiency.
The IRLP3034PBF is typically used in applications that require high switching and low conduction losses. It has a wide variety of applications and is often used in the power management and control of motors, power storage systems, and power distribution systems. Additionally, the IRLP3034PBF is commonly used in high-power amplifiers, mobile phones, and battery chargers.
The working principle of the IRLP3034PBF is based on the field-effect transistor (FET) technology. This device consists of two back-to-back metal-oxide semiconductor (MOS) devices, which are operated in parallel by the gate voltage. This gate voltage controls the amount of current passing between the source and drain, resulting in the switching function of the device.When the gate voltage is low, the MOS device is off, and no current passes between the source and drain. When the gate voltage is increased, the MOS device is turned on and current is allowed to pass between the source and drain. This is known as the on/off action of the device.
The IRLP3034PBF can be used for a variety of applications due to its highly reliable, cost-effective, and easy to use nature. This device is ideal for electric engineering applications, such as power management, motor control, and power storage systems. The IRLP3034PBF is capable of handling high currents and offers excellent thermal management, allowing for enhanced reliability and overall performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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