
Allicdata Part #: | IRLW510ATM-ND |
Manufacturer Part#: |
IRLW510ATM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 5.6A I2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.8W (Ta), 37W (Tc) Throu... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 2.8A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLW510ATM application field and working principle can be understood from the perspective of transistors, FETs and MOSFETs. This article will focus on this single type of transistor, its application fields and basic working principles.
FETs are the acronyms of “field effect transistor” and is the most widely used type of transistor in electronic circuits. FETs are three-terminal semiconductor devices that effectively act as an electronic switch. It is used to control the flow of current between the source and drain connections by affecting the voltage level at the gate connection.
MOSFETs are also in the family of FETs and are also known as metal oxide semiconductor field effect transistors. MOSFETs are three-terminal semiconductor devices that use a metal oxide layer as a gate insulator between the gate and the source terminals to control current flow between the source and drain connections. These devices are widely used in amplifier circuits for audio applications and in switching circuits for power switching applications.
The IRLW510ATM is a standard enhancement mode, low-side, high current, N- Channel power Mosfet. It is designed to offer superior performance in power control applications and is particularly suitable for high switching frequency applications. The device features an extremely high current capacity with a peak current rating of 310A and is rated for operation at up to 100V.
The working principle behind the IRLW510ATM is simple. The voltage applied to the gate controls the ratio between the current flowing through the device and the current flowing around the device. The device is normally off, and when the gate voltage is increased, the current flowing through the device increases proportionally. Once the voltage is above the threshold voltage, the device turns on and is saturated and will not conduct any current.
The IRLW510ATM is typically used in a variety of power control applications such as switching power supplies, inverters, motor control circuits and DC-DC converters for both commercial and industrial applications. It is a reliable, high-power switching device, which provides excellent performance in high-frequency switching circuits. The device can be used to switch heavy loads with minimal switching losses and is designed for use in both AC and DC applications.
In conclusion, the IRLW510ATM is one of the most widely used single type of transistor, which can be used in many power control applications. The device is designed for use in both AC and DC applications and is characterised by its high current capacity and peak current rating. It is a reliable and efficient power switching device, which is ideal for applications requiring high switching frequency and minimal switching losses. It is the ideal choice for applications such as switching power supplies, inverters, motor control circuits and DC-DC converters.
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