IS25LP080D-JNLE-TR Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	800µs
Memory Interface:	SPI - Quad I/O, QPI, DTR
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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Introduction to IS25LP080D-JNLE-TR

IS25LP080D-JNLE-TR is a non-volatile multi-level cell NAND flash memory manufactured by ISSI (Integrated Silicon Solution Inc.) that offers reliable storage and high-performance in a wide range of applications. The IS25LP080D-JNLE-TR incorporates a 512-Mbyte capacity and provides excellent read/write speed and endurance. In terms of physical type, the IS25LP080D-JNLE-TR is a small-scale, thin form factor device suitable for low-profile layouts.

Application Field of IS25LP080D-JNLE-TR

IS25LP080D-JNLE-TR is appreciated for its wide variety of application areas. It can be used in many different kinds of embedded systems and small-scale portable storage devices such as cellular phones, digital cameras and digital voice recorders. It is also one of the most popular flash memory choices due to its excellent read/write speed and low power consumption. In terms of industrial applications, the IS25LP080D-JNLE-TR is particularly useful for applications requiring reliable, fast, and high-density storage. These include avionics, automated test equipment (ATE), intelligent remote sensing applications, automotive, which require a small form factor to fit into tight spaces, as well as power-friendly applications such as wearables. Furthermore, the fast interface of the IS25LP080D-JNLE-TR is also useful in harsh environments. For instance, the device is often used for military, aerospace, and medical applications due to its rugged durability and high endurance to withstand extreme temperatures, humidity, and vibration.

Working Principle of IS25LP080D-JNLE-TR

The IS25LP080D-JNLE-TR utilizes a multi-level cell (MLC) NAND flash memory architecture, which is a type of non-volatile memory that stores data in individual cells. Each cell can contain up to two bits, which are represented as the following states: 00 (low), 01 (medium), 10 (high), and 11 (highest). When data is written to the memory, it is stored in the cells according to the corresponding bit patterns. This enables the device to store more data in the same size as a single-level cell architecture, which is capable of only storing one bit per cell.The IS25LP080D-JNLE-TR is capable of fast read/write speeds of up to 120MB/s and supports industry-standard flash memory interfaces such as Serial Peripheral Interface (SPI) and Quad SPI. It is also equipped with error detection and correction (EDC) capabilities to ensure data integrity. Additionally, the device is optimized to take advantage of advanced signal processing algorithms, yielding a high level of data reliability. The IS25LP080D-JNLE-TR features a wide temperature range of -40°C to +105°C, an endurance rating of 10,000 program/erase cycles, and an average read latency of 25 microseconds. All these features make it well-suited for industrial and portable embedded applications.

Conclusion

IS25LP080D-JNLE-TR is a reliable and high-performanceFlash memory device that offers fast read and write speeds, a wide temperature range, and endurance rating. Due to its excellent performance and small form factor, it is suitable for many different applications such as embedded systems, avionics, and industrial applications. Additionally, thanks to its advanced signal processing algorithms, it ensures data integrity and reliability.

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