IS25LQ025B-JNLE-TR Allicdata Electronics
Allicdata Part #:

IS25LQ025B-JNLE-TR-ND

Manufacturer Part#:

IS25LQ025B-JNLE-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 256K SPI 104MHZ 8SOIC
More Detail: FLASH - NOR Memory IC 256Kb (32K x 8) SPI - Quad I...
DataSheet: IS25LQ025B-JNLE-TR datasheetIS25LQ025B-JNLE-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Kb (32K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The IS25LQ025B-JNLE-TR is a 25 nm 256 Mbit Serial Flash memory from the IS25LQ series. It is a small, low-power and low-cost Flash memory similar to its sister products such as the IS25LQ040B-JNLE-TR, IS25LQ080B-JNLE-TR and IS25LQ160B-JNLE-TR. The IS25LQ025B-JNLE-TR supports a multi-I/O type of bus protocol, making it flexible and highly suitable for applications such as data storage, firmware storage and data buffering. Further, it features single and multiple device configurations such as various multiple I/O types (x1, x2 and x4), needs no separate erase process during program operation and is operated down to supply voltage of 1.7 V. The IS25LQ025B-JNLE-TR also supports three different power-saving mode, thus greatly reducing leakage current for a low-cost optimized system design.

The IS25LQ025B-JNLE-TR consists of two main parts - Flash Array and Control Logic. The Flash Array contains the memory cells, which are organized as 256 Mbit of memory space. The data stored in this array is organized in to 16M words arranged in 8-bit columns and 512K rows. The array is organized as 16 blocks with each block containing 16K words, and each block further divided into 32 sectors.

The Control Logic section consists of control logic, data registers, shift registers, SRAM and timing circuit among others. It manages the storage and retrieval of data from the array, handles device initialization, address sequencing, data latching and programming instructions, and detects various alarm flags such as program failures and data corruptions. The control logic section also supports the three low power operations, i.e., auto power-down, deep power-down, and sleep, allowing applications to reduce power consumption and improve system energy efficiency.

The IS25LQ025B-JNLE-TR also contains functional safety features, which support a safe operating environment for applications such as drive recorders and IoT systems. These functional safety-related features include ECC algorithm for data integrity, secure area for secure data storage, algorithm and information confidentiality, user ID (UID) and one-time programmable memory for initial configuration and version control.

In terms of applications, the IS25LQ025B-JNLE-TR is well suited for consumer electronics, automotive, industrial and medical applications, thanks to its advanced features and enhanced reliability. In consumer electronics, the easy-to-use storage devices such as MP3/MP4 players, tablets, and smartphones, amongst others, rely extensively on the advanced and secure storage offered by the IS25LQ025B-JNLE-TR. In automotive, the IS25LQ025B-JNLE-TR is used to store data in dashboards, navigation devices, and car-net systems. Additionally, the IS25LQ025B-JNLE-TR finds applications in industrial applications such as programmable logic controllers (PLCs) and surveillance systems. The medical sector also benefits from the low-power, secure storage and the functioning safety of the IS25LQ025B-JNLE-TR.

The working principle of the IS25LQ025B-JNLE-TR Flash memory is based on the principle of charging, discharging and recharging of floating gate transistors (FGTs), which are an integral part of the memory cells in the Flash array. In this method, each memory cell consists of an FGT and a control gate. The control gate is connected to an address line that determines the activation or deactivation of the cell. As the voltage applied to the control gate is changed, the electrical charges stored in the FGT are either increased or decreased. This process of charging and discharging of FGTs is the basis of reading or writing data from or to the memory cell.

The IS25LQ025B-JNLE-TR has numerous characteristics that make it an ideal choice for many applications. It is a low-power, low-cost Serial Flash memory that offers a high level of data security, easy programming and low power consumption, making it suitable for a wide range of applications. Further, its various features such as multi-I/O type of bus protocol, various power-saving modes and functional safety features offer reliable performance, making it reliable and safe to use in crucial systems.

The specific data is subject to PDF, and the above content is for reference

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