IS25LQ020B-JNLE-TR Allicdata Electronics
Allicdata Part #:

IS25LQ020B-JNLE-TR-ND

Manufacturer Part#:

IS25LQ020B-JNLE-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 2M SPI 104MHZ 8SOIC
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8) SPI - Quad I/...
DataSheet: IS25LQ020B-JNLE-TR datasheetIS25LQ020B-JNLE-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important part of modern electronic equipment and plays an essential role in memory storage and call as well as data processing. The IS25LQ020B-JNLE-TR is a type of memory device specifically designed for the needs of the digital world. The features of the IS25LQ020B-JNLE-TR make it a great choice for use in a range of digital applications.

Application Field

The IS25LQ020B-JNLE-TR is a 2 Megabit SPI Flash memory that is ideal for a variety of embedded and industrial applications. It is suitable for use in automotive, medical, industrial, and consumer applications. The device has a small footprint, making it ideal for use in space-limited designs. The device offers both write protection and erase suppression functions that enable data storage to be secured and maintained in non-volatile memory.

The IS25LQ020B-JNLE-TR features a high quality single-level cell (SLC) NAND architecture. This memory device is also capable of operating with SPI clock speeds up to 20MHz, providing a reliable and stable performance for all types of applications. Its small form factor also allows for use in applications that require small to medium-sized memory footprints.

Working Principle

The IS25LQ020B-JNLE-TR is designed to use a cell type of NAND architecture. The process of writing data to the device is simple and straightforward. Data is written to the memory with an internal register. This data is then stored as a single unit and is divided into multiple pages. Once the data is written, it can be read directly from the same internal register.

The device can store data in either 8KB or 4KB page size and has the added advantage of being able to tolerate power surges and reset protection. This allows for reliable and consistent data storage, even when power is lost. The device also features advanced error correction, which allows for reliable data transmission and retrieval from the SPI Flash memory.

The device also has a unique erase suppression feature that allows data to stay intact when power is lost. This ensures that the data stored on the device is not lost and is not corrupted during a power failure. The device also features advanced write and erase protection, which helps protect against accidental data losses. This makes it an ideal choice for applications where data security and reliability are essential.

The IS25LQ020B-JNLE-TR is an excellent choice for digital applications that require reliable, efficient, and durable memory storage. This memory device offers both a high data rate and a small footprint, making it ideal for use in a range of digital applications. Its advanced error correction and power surge protection make it an excellent choice for applications that require reliable data storage and retrieval. The device also features advanced write and erase protection, which make it an ideal choice for applications where data security and reliability are essential.

The specific data is subject to PDF, and the above content is for reference

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