Allicdata Part #: | IS25LQ512B-JBLE-TR-ND |
Manufacturer Part#: |
IS25LQ512B-JBLE-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC FLASH 512K SPI 104MHZ 8SOIC |
More Detail: | FLASH - NOR Memory IC 512Kb (64K x 8) SPI - Quad I... |
DataSheet: | IS25LQ512B-JBLE-TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Kb (64K x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 800µs |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IS25LQ512B-JBLE-TR is a 512K-bit SPI NOR Flash Memory with standard SPI protocol. It provides the flexibility and performance required for many memory applications. This memory is suitable for various non-volatile memory applications, including embedded multimedia, automotive memory applications, data storage and code shadowing applications. Its features include a maximum clock frequency of 25MHz, an access time of 70ns, multiple bytes write options and an endurance of up to 10,000 write cycles.
IS25LQ512B-JBLE-TR is an industry-standard memory device that is widely used across numerous applications. It is a non-volatile memory device with an extended range of features that offer the highest degree of reliability and performance. The device is designed for embedded multimedia applications, data storage applications and code shadowing applications. In addition, it can be used in automotive memory applications, as well as medical and aerospace applications.
The basic working principle of IS25LQ512B-JBLE-TR is very simple. It reads and stores data in the form of electrical signals, which are transmitted between different components. The data is then processed and stored in an array of memory cells. When the user wants to recall the stored data, the memory cell is activated and the data is read out. In order to write new data into the memory, the data is first written in the form of electrical signals and then transferred to the memory cell.
The IS25LQ512B-JBLE-TR is also designed for low-power operation. It features a power down mode with a current of less than 1uA to reduce power consumption. Additionally, the device has a built-in write protection feature for added security. Also, its features include a stand-by mode with a current of less than 0.5uA.
In addition to its application in multimedia, automotive memory applications, code shadowing and data storage, the IS25LQ512B-JBLE-TR is also commonly used in medical and aerospace applications. It is capable of storing large data sets, and its high-speed operation enables fast processing times. Additionally, its low-power operation reduces battery consumption and allows for longer device operation.
IS25LQ512B-JBLE-TR is an ideal memory device for a wide range of applications. It has a wide range of features and is designed for reliable and high performance. Additionally, its low-power operation makes it ideal for battery-operated devices and extended operation. Its ability to store large amounts of data, as well as its fast processing speed, makes it an ideal choice for numerous applications in different fields.
The specific data is subject to PDF, and the above content is for reference
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IS25LQ512B-JKLE-TR | ISSI, Integr... | 0.28 $ | 1000 | IC FLASH 512K SPI 104MHZ ... |
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