IS25WP016-JNLE-TR

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The IS25WP016-JNLE-TR memory is one of the leading components in the semiconductor industry. It is designed to be a high-density, low-power, read/write non-volatile memory (NVM). This component can be found in different applications and it provides an excellent range of features and functions.

In terms of applications, the IS25WP016-JNLE-TR memory is an ideal storage solution for consumer products such as digital still cameras, gaming products, personal digital assistants, and other consumer electronics products. It is also ideal for industrial applications such as medical equipment, instrumentation and data acquisition devices, and industrial automation. The memory can also be used in automotive, networking, and aerospace applications.

The IS25WP016-JNLE-TR memory is built on the Serial Peripheral Interface (SPI) bus. It consists of a Dual-Cell 8-bit Super Flash memory and supports two modes of operation, namely a Streaming and a Page + Burst Mode. The burst mode enables a four-byte character write and a 16-byte buffer write command. This allows for fast data transfers from external devices to the memory. The memory also has an active shift latency of 15 microseconds.

In addition, the IS25WP016-JNLE-TR memory also offers an extended temperature range of -40°C to 85°C for the automotive industry. It allows for the storage of data in a variety of ways, including random addressing, multiple addresses, and page addressing. There are also multiple write and read protection modes which can be set to keep data safe. One of the key features of this memory is the sector size of 4-KB. This allows data within a sector to be accessed in a single write access.

The IS25WP016-JNLE-TR memory also supports a serial auto-detection feature which enables the device to be detected by any type of host controller. It has an integrated Power On Reset (POR) circuitry which ensures that the device is in a known state after system power cycles. This ensures data integrity.

In terms of working principle, the IS25WP016-JNLE-TR memory operates on a 3V power source. The SPI bus controller is clocked by a SCLK signal which is generated by the host. The MOSI (Master Output Slave Input) and MISO (Master Input Slave Output) signals are used for data communication between the memory and the host. The WP# (Write Protect) signal is used to control the write protection mode. The device also has a Chip Select (CS) signal which is used to enable the memory device.

The IS25WP016-JNLE-TR memory supports up to 100,000 erase/program cycles. It has an endurance of 1,000 write/erase cycles per page and a data retention of 10 years at 85°C temperatures. The memory is also very reliable and durable, with an ESD tolerance of up to 4K volts.

In summary, the IS25WP016-JNLE-TR memory is a versatile, low-power and high-density memory suitable for a range of applications. Its ability to support multiple modes of operation and its extended temperature range makes it ideal for a variety of applications. It also offers excellent reliability, endurance, and data retention, making it suitable for any application where memory integrity is critical.

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