Allicdata Part #: | IS45S32200E-6BLA1-TR-ND |
Manufacturer Part#: |
IS45S32200E-6BLA1-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 64M PARALLEL 90TFBGA |
More Detail: | SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5... |
DataSheet: | IS45S32200E-6BLA1-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (2M x 32) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 5.5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-TFBGA (8x13) |
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IS45S32200E-6BLA1-TR is a kind of memory integrated circuit in high-speed, low power dynamic random access memory ( DRAM ) category. IS45S32200E-6BLA1-TR has 256 Meg x 4 or 512 Meg x 4 bit organization of LVTTL (low voltage TTL) compatible memory, which is organized as 32 or 64M words x 4 bits. It is suitable for a number of digital applications, such as signal processing, imaging, satellite communication, etc.
Application Field
IS45S32200E-6BLA1-TR is used for various digital applications. It is suitable for signal processing, imaging, satellite communication, networking and multimedia applications that require high speed, low power and high capacity. The device has 512M x 4 bit organization and is organized as 32M words x 4 bits. Thus, allowing higher density data storage and faster access of data from the memory. In addition, IS45S32200E-6BLA1-TR is designed to operate in standards like DDR SDRAM, SSTL18 and SSTL_15. Such memory modules are able to support high-speed operations and reduce time delay significantly in data transfers.
IS45S32200E-6BLA1-TR is also used for embedded applications. The device includes functions such as refresh, refresh fail detection and programmable refresh priority, which can be used to support the refresh operations of data retention. It also supports three-phase refresh, which ensures that data retention is maintained in the event of power failure. Also, the device offers superior refresh rate capabilities and supports several refresh modes, including self-refresh and partial page read/write refresh functions. This makes it ideal for use in embedded products where memory must be reliably kept for a long time.
IS45S32200E-6BLA1-TR is suitable for use in many different computer applications. It is mainly used for caching, buffering the data, large address space, high bandwidth, large storage capacity and low power consumption. It can be used in systems such as servers, PDAs, laptops and desktops. It is also used for data storage in large computer networks like internet, intranet and remote access networks.
Working Principle
IS45S32200E-6BLA1-TR is a DRAM based memory chip and follows the core DRAM architecture. DRAM is a type of semiconductor memory in which a transistor is used to store a bit or byte of data. During operation, the bit stored in the transistor is switched on and off by sending different voltage levels to the transistor. The on and off switching of the transistor allows data to be accessed and stored in the memory chip in a very efficient manner. The data can be read and written at high speeds making it suitable for applications that require large amounts of data to be accessed and stored quickly.
IS45S32200E-6BLA1-TR uses a sense amplifier and a DRAM cell array to store data. The sense amplifier is responsible for reading the data from the DRAM cell array and for writing the data to the DRAM cell array. The sense amplifier reads the data by sending the appropriate voltage levels to the DRAM cell array. The data is written to the DRAM cell array by coding the data in a format that can be read by the sense amplifier. The data is read and written in a random access mode and in order to reduce power consumption the device includes in-built circuit to switch off the sense amplifier if not in use.
In addition to the core DRAM architecture, IS45S32200E-6BLA1-TR also includes auto-refresh capability for data retention, four banks for faster access of data and two Internal Burst length for faster transfer of data. This makes IS45S32200E-6BLA1-TR an ideal choice for applications that require a high-performance and large capacity memory.
The specific data is subject to PDF, and the above content is for reference
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IS45S32200E-7TLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 86TS... |
IS45S32200E-6TLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 86TS... |
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IS45S32200E-7TLA2-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 86TS... |
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IS45S32400B-7TLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 86T... |
IS45S32200E-6BLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 90TF... |
IS45S32200E-7BLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 90TF... |
IS45S32200E-7BLA2-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 90TF... |
IS45S32400B-7BLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90T... |
IS45S32400B-6BLA1-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90T... |
IS45S16400F-6BLA1 | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 54TF... |
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