IS61LF51236B-7.5B3LI Allicdata Electronics
Allicdata Part #:

IS61LF51236B-7.5B3LI-ND

Manufacturer Part#:

IS61LF51236B-7.5B3LI

Price: $ 10.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 117MHZ
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61LF51236B-7.5B3LI datasheetIS61LF51236B-7.5B3LI Datasheet/PDF
Quantity: 1000
144 +: $ 9.59483
Stock 1000Can Ship Immediately
$ 10.56
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Introduction
The IS61LF51236B-7.5B3LI is a low-power high-density SRAM memory device with a 4Kbit capacity, operating at 1.8V with a high-speed read access time of 15ns. It provides a highly reliable, scalable, cost-effective solution for high-performance network applications. For example, it can be used in high-speed Ethernet switches, routers, VoIP gateways and other networking equipment.

Application Field
The IS61LF51236B-7.5B3LI SRAM memory device is designed for high-performance, high-density, low-power applications. It is ideally suited for use in embedded systems, networking equipment, data centers, industrial control systems, set-top boxes, test and measurement, automotive and aerospace applications. This device is capable of delivering high-speed data transfer while providing a low-power and cost-effective solution.

Working Principle
The IS61LF51236B-7.5B3LI SRAM memory device works on a simple principle: it stores data in a series of electronic circuits, with each circuit representing one bit of data. When the data needs to be accessed or transmitted, each circuit outputs the corresponding bit of data at a very high speed. This high-speed data transfer is achieved by the device’s internal circuitry and architecture, which support efficient data flow and minimize power consumption.

The IS61LF51236B-7.5B3LI SRAM memory device also features error detection and correction capabilities, ensuring data integrity over time. Its internal circuitry and architecture also allow for reliable operation in high-temperature and vibration environments.

Conclusion
The IS61LF51236B-7.5B3LI SRAM memory device is an integral part of many high-performance network applications. With its low-power operation and high-speed data transfer capabilities, it provides an effective and reliable solution for these applications. It features error detection and correction capabilities, allowing for reliable operation in a variety of conditions, making it suitable for a wide range of embedded systems and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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