IS61VPS204836B-250B3L-TR

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IS61VPS204836B-250B3L-TR is a type of non-volatile memory which combines Static Random Access Memory (SRAM) with Electronically Erasable Programmable Read Only Memory (EEPROM). This memory, which is available from manufacturers such as IDT, is designed to provide a simple, cost-effective solution for data retention applications. It can be used in a variety of industrial and consumer electronics applications, from medical and aerospace devices to computer peripherals, gaming systems and industrial automation.

The two major components of IS61VPS204836B-250B3L-TR are the SRAM and the EEPROM. The SRAM is a high-speed memory which is ideal for fast storage and retrieval of data. It has a data access time of 250ns and operates at 3.3V--making it suitable for a number of today\'s low-power applications. The EEPROM component is also a non-volatile memory which offers both electrical and thermal protection, providing reliable data retention.

IS61VPS204836B-250B3L-TR combines both of these technologies in a single device, allowing it to be used in memory applications ranging from configuration and data storage to battery-backed industrial control and medical devices. The device has a number of features which make it well-suited for these types of applications, including an extended temperature range and a power-on reset (POR) function which ensures that SRAM contents are retained in the event of a power loss.

IS61VPS204836B-250B3L-TR is well-suited for a variety of industrial and consumer electronics applications. It can be used in medical and aerospace systems, computer peripherals, gaming systems, industrial automation and more. The device is designed to provide a simple, cost-effective solution for data retention. It is capable of storing up to 16 megabytes of data, while its low power consumption and extended temperature range make it suitable for low-power applications.

The working principle of IS61VPS204836B-250B3L-TR revolves around the two main components—SRAM and EEPROM. Data is stored in the SRAM where it can be accessed quickly and efficiently. The EEPROM component acts as a long-term memory, storing data even in the event of a power loss. Together, these two components provide a reliable, cost-effective solution for data retention applications.

To ensure reliable data retention, IS61VPS204836B-250B3L-TR includes several features such as a power-on reset (POR) function and an extended temperature range. These features ensure that data is retained in the event of a power loss or a wide range of temperatures. In addition, the device includes several security features such as write-protect, write-protect with data retention, write-protect with optional data retention, and programmable write protect.

In summary, IS61VPS204836B-250B3L-TR is a type of non-volatile memory which combines SRAM and EEPROM components to provide a reliable, cost-effective solution for data retention applications. Its features, such as an extended temperature range and a power-on reset (POR) function, make it suitable for a variety of industrial and consumer electronics applications. It is capable of storing up to 16 megabytes of data and its low power consumption makes it suitable for low-power applications.

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