IS61VVF409618B-7.5TQL

Memory is an essential computer component. It is used to store information and instructions which the processor can access and execute. One example of memory is the IS61VVF409618B-7.5TQL, which is a static random access memory (SRAM) chip manufactured by Integrated Silicon Solution, Inc. The IS61VVF409618B-7.5TQL provides 18Mb of fast and low power SRAM with Memory Protection Unit (MPU), which protects memory against unauthorised access.

The IS61VVF409618B-7.5TQL is ideal for applications with high performance and low power requirements, such as embedded systems and security systems. The device provides an array of static memory cells arranged in a 9 x 18 array, which can store up to 18Mb of data. It has a fast read/write access time of 7.5 ns and an active current of just 8mA. The device also offers additional protection against soft errors and security threats with its built-in MPU.

The IS61VVF409618B-7.5TQL has a wide range of applications, from embedded systems and security systems to automotive and communication systems. It is extensively used in applications such as programmable logic controllers (PLCs), point of sale (POS) systems and industrial higher-level control systems.

The working principle of IS61VVF409618B-7.5TQL is based on static random access memory (SRAM) technology. This memory consists of a two-dimensional array of cells, each cell composed of six transistors. The device uses complementary metal-oxide-semiconductor (CMOS) technology to store data in the form of “1s” and “0s”. The transistors form two cross-coupled inverters to store each bit of data.

When the chip is powered on, the transistors form a rectangular sensing region around each cell. This sensing region is filled with charge, which is used to determine the value of the bit in each cell. If the charge is high, the bit is a “1”, if it’s low, it’s a “0”.

When data is written to the chip, a two-phase write process is used. First, the chip is pre-charged. A high voltage is applied to the row and bit lines of the cell and the transistors in the cell are conditioned to accept either a “1” or “0”, depending on the voltage applied.

Then, the cell is written to. A voltage of the appropriate level is applied to the bit lines, and this level is determined by the state of the adjacent cell. If the adjacent bit is a “1”, the voltage will be high and the bit written to the cell will be a “1”. If the adjacent bit is a “0”, the voltage will be low and the bit written to the cell will be a “0”.

When data is read from the chip, the sensing region of the cell is again used to determine the value of the bit in the cell. The device releases a certain amount of charge, which is used to determine whether the bit is a “1” or “0”.

The IS61VVF409618B-7.5TQL is a versatile and reliable memory solution for a wide variety of embedded and security applications. It offers fast access times, low power consumption, and built-in security features, making it an ideal choice for applications requiring a high-performance and low-power memory solution.