IS61QDPB42M36A1-500B4LI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QUADP
Memory Size:	72Mb (2M x 36)
Clock Frequency:	500MHz
Write Cycle Time - Word, Page:	--
Access Time:	8.4ns
Memory Interface:	Parallel
Voltage - Supply:	1.71 V ~ 1.89 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-LFBGA (13x15)

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Introduction to IS61QDPB42M36A1-500B4LI MemoryIS61QDPB42M36A1-500B4LI memory is a static random access memory (SRAM) chip that is used in various computing and telecommunications devices. It is a component of the JEDEC standard family of SRAM chips. The IS61QDPB42M36A1-500B4LI chip is a low power consumption device that offers excellent refresh rates and stability.Application Field of IS61QDPB42M36A1-500B4LI MemoryThe application field of IS61QDPB42M36A1-500B4LI memory is quite vast and can be used in a variety of areas. It is commonly used in mobile phones for the purpose of storing user data. It is also used in certain embedded systems and computer system memory. The highly stable IS61QDPB42M36A1-500B4LI is ideal for any application that requires high reliability and ease of use. Additionally, it is also used in the medical field for non-volatile storage of patient information.Working Principles of IS61QDPB42M36A1-500B4LI MemoryIS61QDPB42M36A1-500B4LI memory stores data in a cell array that consists of 6 transistors. Each cell is connected to a separate "bit line" which functions as a select line. Every cell in the array can be separately addressed with no conflict between addresses in the array. All cell reading and writing operations are performed in the active memory cycle.When the memory reads from a location, the addressed bit line is set to a high state which turns the transistor on. This allows the stored data to be read from the associated cell. Conversely, when writing to a location, the addressed bit line is set to a low state which turns the transistor off, allowing the stored data to be changed.When the memory is idle, its cells are in a standby state which is known as the "refresh" cycle. This process continually refreshes data in all the cells to ensure that stored information is not corrupted over time. This makes IS61QDPB42M36A1-500B4LI memory an ideal memory solution for applications that require high stability.ConclusionThe IS61QDPB42M36A1-500B4LI is a static random access memory (SRAM) chip that is used in various computing and telecommunications devices. Its application field is quite varied, making it ideal for use in mobile phones, embedded systems, computer system memory, and medical applications. Its working principles involve cell reading and writing operations within an active memory cycle and refreshing data in all cells during the "refresh" cycle. This makes it an ideal memory solution for applications that require high stability.

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