IS61VPS204836B-250B3LI Allicdata Electronics
Allicdata Part #:

IS61VPS204836B-250B3LI-ND

Manufacturer Part#:

IS61VPS204836B-250B3LI

Price: $ 81.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 72M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 72Mb (2M x 36) Parall...
DataSheet: IS61VPS204836B-250B3LI datasheetIS61VPS204836B-250B3LI Datasheet/PDF
Quantity: 1000
144 +: $ 73.76320
Stock 1000Can Ship Immediately
$ 81.14
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 2.8ns
Memory Interface: Parallel
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

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IS61VPS204836B-250B3LI Memory
The IS61VPS204836B-250B3LI is a type of memory used in a variety of applications. In particular, it is used in embedded systems, as well as in networking, data storage, and graphics hardware.
A memory is essentially a chip or chips of memory which provides data storage for digital applications. This particular memory device is composed of up to 20 separate 64 Mbit SRAM devices, which are connected and addressed using an address multiplexing system.
The device features a 3.3 V single 2.5 V write/read-cycle operation, as well as a wide range of temperature operating conditions from -40°C to +85°C. It also features a current consumption of 250 mA, so it is very energy efficient.
The memory device has several advantages over other forms of memory. It is low profile, which makes it suitable for use in tight spaces, such as in computers and consumer electronic devices. Additionally, the memory device has a high speed, which makes it suitable for use in high speed applications, such as networking and graphics display.
The working principle of the IS61VPS204836B-250B3LI is relatively simple. The device is composed of up to 20 separate 64 Mbit SRAM devices which are connected and addressed using address multiplexing. When data is written to the memory device, it is stored in its SRAM devices, and can then be read back when requested. The device is capable of providing fast access to data, as well as fast writing and reading of data, making it ideal for use in applications where speed is a priority.
The IS61VPS204836B-250B3LI is a highly versatile memory device, and is suitable for use in a wide range of applications, such as embedded systems, data storage, networking, and graphics hardware. It is particularly well-suited for use in applications requiring speed, low-profile construction, and wide temperature operating conditions.

The specific data is subject to PDF, and the above content is for reference

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